Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on electrical characteristics of New type bulk LDMOS

새로운 Bulk type LDMOSFET의 전기적 특성에 대한 연구

  • 정두연 (원광대학교 전자재료공학과) ;
  • 김종준 (반도체공동연구소) ;
  • 이종호 (경북대학교 전자전기정보공학부) ;
  • 박춘배 (원광대학교 전자재료공학과)
  • Published : 2003.05.16
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Abstract

In this paper, we proposed a new bulk LDMOS structure which can be used for RF application, and its fabrication steps were introduced. The simulated devices consist of three types: Bulk device, SLB(SOI Like Bulk), and SOI device. As a result of process and device simulation, we showed electrical characteristics, such as threshold voltage, subthreshold slope, DIBL(Drain Induced Barrier Lowering), off-state current, and breakdown voltage. In this simulation study, the lattice temperature model was adopted to see the device characteristics with lattice temperature during the operation. SLB device structure showed the best breakdown characteristics among the other structures. The breakdown voltage of SLB structure is about 9V, that of bulk is 7V, and that of SOI is 8V.

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