Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Analysis of the electrical characteristics of SOI LIGBT with dual-epi layer

이중 에피층을 가지는 SOI LIGBT의 전기적 특성분석

  • Kim, Hyoung-Woo (Korea Electrotechnology Research Institute, Power Semiconductor Group) ;
  • Kim, Sang-Cheol (Korea Electrotechnology Research Institute, Power Semiconductor Group) ;
  • Kim, Ki-Hyun (Korea Electrotechnology Research Institute, Power Semiconductor Group) ;
  • Kim, Eun-Dong (Korea Electrotechnology Research Institute, Power Semiconductor Group)
  • 김형우 (한국전기연구원 전력반도체연구그룹) ;
  • 김상철 (한국전기연구원 전력반도체연구그룹) ;
  • 김기현 (한국전기연구원 전력반도체연구그룹) ;
  • 김은동 (한국전기연구원 전력반도체연구그룹)
  • Published : 2004.07.05
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Abstract

Due to the charge compensation effect, SOI(Silicon-On-Insulator) LIGBT with dual-epi layer have been found to exhibit both low forward voltage drop and high static breakdown voltage. In this paper, electrical characteristics of the SOI LIGBT with dual-epi structure is presented. Trenched anode structure is employed to obtain uniform current flowlines and shorted anode structure also employed to prevent the fast latch-up. Latching current density of the proposed LIGBT with $T_1=T_2=2.5{\mu}m,\;N_1=7{\times}10^{15}/cm^3,\;N_2=3{\times}10^{15}/cm^3$ is $800A/cm^2$ and breakdown voltage is 125V while latching current density and breakdown voltage of the conventional LIGBT is $700A/cm^2$ and 55V.

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