Growth and optoelectrical properties for $Cd_{1-x}Zn_xS$ thin films byg Hot Wall Epitaxy method

HWE에 의한 $Cd_{1-x}Zn_xS$ 박막의 성장과 광전기적 특성

The $Cd_{1-x}Zn_xS$ thin films were grown on the Si(100) wafers by a hot wall epitaxy method(HWE). The source and substrate temperature are $600^{\circ}C\;and\;440^{\circ}C$ respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction(DCXD). Hall effect on the sample was measured by the van der Pauw method and studied on the carrier density and mobility dependence on temperature. In order to explore the applicability as a photoconductive cell, we measured the sensitivity($\gamma$), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time. The results indicated that the photoconductive characteristic were the best for the $Cd_{0.53}Zn_{0.47}S$ samples annealed in Cu vapor compare with in Cd, Se, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of $1.65{\times}10^7$, the MAPD of 338mW, and the rise and decay time of 9.7ms and 9.3ms, respectively