ASG(Amorphous Silicon TFT Gate driver circuit) Technology for Mobile TFT-LCD Panel

  • Jeon, Jin (Mobile Display Development Team(LCD), AMLCD business, Samsung Electronics Corp) ;
  • Lee, Won-Kyu (Mobile Display Development Team(LCD), AMLCD business, Samsung Electronics Corp) ;
  • Song, Jun-Ho (Mobile Display Development Team(LCD), AMLCD business, Samsung Electronics Corp) ;
  • Kim, Hyung-Guel (Mobile Display Development Team(LCD), AMLCD business, Samsung Electronics Corp)
  • Published : 2004.08.23

Abstract

We developed an a-Si TFT-LCD panel with integrated gate driver circuit using a standard 5-MASK process. To minimize the effect of the a-Si TFT current and LC's capacitance variation with temperature, we developed a new a-Si TFT circuit structure and minimized coupling capacitance by changing vertical architecture above gate driver circuit. Integration of gate driver circuit on glass substrate enables single chip and 3-side free panel structure in a-Si TFT-LCD of QVGA(240$^{\ast}$320) resolution. And using double ASG structure the dead space of TFT-LCD panel could be further decreased.

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