한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

Al 하부전극을 이용한 AlN 박막의 제작

Preparation the AlN thin films with the Al bottom electrode

  • 김건희 (경원대학교 전기정보공학과) ;
  • 금민종 (경원대학교 전기정보공학과) ;
  • 김현웅 (경원대학교 전기정보공학과) ;
  • 김경환 (경원대학교 전기정보공학과)
  • Kim, Geon-Hi (Dept. of Electrical & Information Engineering Kyungwon Uni.) ;
  • Keum, Min-Jong (Dept. of Electrical & Information Engineering Kyungwon Uni.) ;
  • Kim, Hyun-Woong (Dept. of Electrical & Information Engineering Kyungwon Uni.) ;
  • Kim, Kyung-Hwan (Dept. of Electrical & Information Engineering Kyungwon Uni.)
  • 발행 : 2004.04.24
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초록

In this study AlN/Al thin films were prepared at various conditions, such as $N_2$ gas flow rate $[N_2/(N_2+Ar)]$ from 0.6 to 0.9, a substrate temperature ranging from room temperature to $300^{\circ}C$ and working pressure 1mTorr. We estimated crystallographic characteristics and c-axis preferred orientations of AlN/Al thin films as function of Al electrode surface roughfness. The optimal processing conditions for Al electrode were found at substrate temperature of $300^{\circ}C$, sputtering power of 100W and a working pressure of 2mTorr. In these conditions, we obtained the c-axis preferred orientation of $AlN/Al/SiO_2/Si$ thin film about 4 degree.

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