Polycrystalline CdSe thin films were grown on ceramic substrate using a chemical bath deposition(CBD)method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdSe polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdSe samples annealed in $N_2$ gas at $450^{\circ}C$ it was found hexagonal structure whose lattice parameters $a_0$ and $c_0$ were $4.302{\AA}$ and 7.014 ${\AA}$, respectively. Its grain size was about 0.3 ${\mu}m$. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and movility depending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33K and 200K, and by polar optical scattering at temperature range of 200K and 293K. We measured also spectral response, sensitivity$(\gamma)$, maximum allowable power dissipation and response time on these samples.

전자빔 증착법 (e-beam evaporation)를 이용하여 $TiO_2$ 박막과 $Al_2O_3/TiO_2$ 이중박막을 제조한 후, $800^{\circ}C$ 공기 중에서 열처리하여, 알루미나 층의 유무에 따른 두 박막의 전기전도 특성과 100 ppm CO 가스에 대한 반응 특성을 고찰하였다. 알루미나 층이 증착되지 않은 순수한 $TiO_2$ 박막의 전기 전도도 (in dry air)는 $100^{\circ}C-500^{\circ}C$ 온도범위에서 온도가 증가함에 따라 증가하였으며 알루미나 층이 증착된 $Al_2O_3/TiO_2$ 이중막보다 높은 전도도를 나타내고 있으나, 약 $300^{\circ}C$이상의 온도에서는 $Al_2O_3/TiO_2$ 이중막의 전기 전도도가 급격히 증가하여 $TiO_2$ 박막의 전기전도도 보다 더 높은 값을 나타내었다. 또한 온도에 따른 CO 가스 감도(sensitivity)는 $TiO_2$ 박막의 경우 $400^{\circ}C$까지는 서서히 증가하여 그 이상의 온도에서 급격히 감소하였으나, $Al_2O_3/TiO_2$ 이중막은 $250^{\circ}C$에서 감도가 급격히 증가하여 최대값을 나타내었으며, $350^{\circ}C$에서 감도가 급격히 감소하는 특성을 나타내었다.

This paper investigated the stability of Ta-Mo alloy on thin gate dielectric. Ta-Mo alloy was deposited by using co-sputtering process after thermal growing of 3.4nm and 4.2nm silicon dioxide. When the sputtering power of Ta and Mo were 100W and 70W, respectively, the suitable work function for NMOS gate electrode, 4.2eV, could obtain. To prove interface thermal stability of thin film gate dielectric and Ta-Mo alloy, rapid thermal annealing was performed at $600^{\circ}C$ and $700^{\circ}C$ for 10sec in Ar ambient. The results of interface reaction were surveyed by change of silicon dioxide thickness and work function after annealing process. Also, the reliability of alloy gate and gate dielectric could be confirmed by quantity of leakage current. Ta-Mo alloy was showed low sheet resistance and thermal stability, namely, little change of gate dielectric and work function, after $700^{\circ}C$ annealing process.

The PZT thin films are well-known material that has been widely studied for ferroelectric random access memory (FRAM). We etched the PZT thin films by $CF_4/(Cl_2+Ar)$ plasma and investigated improvement in etching damage by $O_2$ annealing. PZT thin films were etched for 1 min in an ICP using a gas mixture of $Cl_2$(80%)/Ar (20%) with 30% $CF_4$ addition. The etching conditions were fixed at a substrate temperature of $30^{\circ}C$, an rf power of 700 W, a dc-bias voltage of -200 V and a chamber pressure of 2 Pa. To improve the ferroelectric properties of PZT thin films after etching, the samples were annealed for 10 min at various temperatures in $O_2$ atmosphere. After $O_2$ annealing, the remanent polarization, fatigue, and the leakage current were gradually recovered to the characteristics of the as-deposited film, according as the temperature increased.

An alkoxide-based sol-gel method was used to fabricate $Ba_{0.6}Sr_{0.4}TiO_3$ thin films doped by Bi from 5 to 20 mol% on a $Pt/Ti/SiO_2/Si$ substrate. The structural and dielectric properties of BST thin films were investigated as a function of Bi dopant concentration. The dielectric properties of the Bi doped BST films were strongly dependent on the Bi contents. The dielectric constant and dielectric loss of the films decreased with increasing Bi content. However, the leakage current density of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin film showed the lowest value of $5.13{\times}10^{-7}\;A/cm^2$ at 5 V. The figure of merit (FOM) reached a maximum value of 32.42 at a 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin films. The dielectric constant, loss factor, and tunability of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin films were 333, 0.0095, and 31.1%, respectively.

In this study, BST thin films were etched with inductively coupled $CF_4/(Cl_2+Ar)$ plasmas. The etch characteristics of BST thin films as a function of $CF_4/(Cl_2+Ar)$ gas mixtures were analyzed using quadrupole mass spectrometry (QMS) and optical emission spectroscopy (OES). The maximum etch rate of the BST thin films was 53.6 nm/min because small addition of $CF_4$ to the $Cl_2/Ar$ mixture increased chemical effect. The optimum condition appears to be under a 10 % $CF_4/(Cl_2+Ar)$ gas mixture in the present work.

High density plasma fluorinated silicate glass (HDP FSG) is used as a gap fill film for metal-to-metal space because of many advantages. However, FSG films can cause critical problems such as bonding issue of top metal at package, metal contamination, metal peel-off, and so on. It is known that these problems are caused by fluorine penetration out of FSG film. To prevent it, FSG capping layers such like SRO (Silicon Rich Oxide) are needed. In this study, their characteristics and a capability to block fluorine penetration for various FSG capping layers are investigated. Normal stress and High stress due to denser film. While heat treatment to PETEOS caused lower blocking against fluorine penetration, it had insignificant effect on SiN. Compared with other layers, SRO using ARC chamber and SiN were shown a better performance to block fluorine penetration.

Shallow p+-n junctions were formed by low-energy ion implantation and dual-step annealing processes The dopant implantation was performed into the crystalline substrates using $BF_2$ ions. The annealing was performed with a rapid thermal processor and a furnace. FA+RTA annealing sequence exhibited better junction characteristics than RTA+FA thermal cycle from the viewpoint of junction depth. A new simulator is designed to model boron diffusion in silicon, which is especially useful for analyzing the annealing process subsequent to ion implantation. The model which is used in this simulator takes into account nonequilibrium diffusion, reactions of point defects, and defect-dopant pairs considering their charge states, and the dopant inactivation by introducing a boron clustering reaction. Using a resonable parameter values, the simulator covers not only the equilibrium diffusion conditions but also the nonequilibrium post-implantation diffusion. Using initial conditions and boundary conditions, coupled diffusion equation is solved successfully. The simulator reproduced experimental data successfully.

Recently advancing mobile communication tools and I.T industry, semiconductor device is requested more integrated, faster operation time and more scaled-down. Because of these reasons semiconductor device is requested multilayer interconnection. For the multilayer interconnection chemical mechanical polishing (CMP) becomes one of the most useful process in semiconductor manufacturing process. In this experiment, we focus on understand the characterize and improve the CMP technology by control of slurry flow rate. Consequently, we obtain that optimal flow rate of slurry is 170ml/min, since optimal conditions are less chemical flow and performance high with good selectivity to Ta. If we apply this results to copper CMP process. it is thought that we will be able to obtain better yield.

The oxidizer plays an important role in the metal chemical mechanical polishing(CMP) slurry. Currently, the oxidizer used in CMP slurry is nearly divided into several kinds such as $Fe(NO_3)_3$, $H_2O_2$, $KIO_3$, and $H_5IO_6$. It is generally known that oxidizer character of $H_2O_2$ is more effective than other oxidizers. In this work, we have been studied the characteristics for the $H_2O_2$ concentration of copper slurry, which can applicable in the recent semiconductor manufacturing process. Also, it plays an important role in the planarization of copper films using copper slurries during micro-electronic device fabrication. In this work, we confirmed that removal rate of Cu/TaN changed by $H_2O_2$ concentration on copper slurry. And we used $KMnO_4$ in the measurement method of $H_2O_2$. In analysis results, we confirmed that the difference of results is large. We thought that the difference was due to organic component existence. So in titration method of $H_2O_2$ concentration, we used $Na_2S_2O_3$ instead of $KMnO_4$ as solution. Consequently, using the titration method, we could calculate correct data reduced error. And $H_2O_2$ concentration has been adjusted to the target concentration of 0.1 wt%.

High quality CdTe single crystal for the solar cell fabrication was grown by vertical Bridgman method. The etch pits patterns of {111}surfaces of CdTe etched by Nakagawa solution was observed the {111} A composed of Cd atoms with typical triangle etch pits of pyramid mode. From the photoluminescence measurement on {111}A, we observed free exciton($E_x$) existing only higy quality crystal and neytral acceptor bound exciton($A^0$,X) having very strong peak intensity. Then, the full width at half maximum and binding energy of neutral acceptor bound exciton were 7 meV and 5.9 meV, respectively. By Haynes rule, an actibation energy of impurity was 59 meV. Therefore, the origins on impurity level acting as a neutral acceptor were associated Ag or Cu elements.

인쇄/소결 방법으로 가시영역에서 광감도가 매우 큰 CdSSe 다결정 후막을 만들고 이를 이용하여 광전도 젤을 제작하였다. 후막의 낱알 크기는 $5{\mu}m$ 정도이였다. 광전도 셀은 소결 촉진제로 첨가한 $cucl_2$ 양이 CdSSe 1 g 당 3.06~0.10 mg 정도이변 감도, 광전류와 암전류의 비율이 각각 0.7과 $10^5$ 이상을 나타내었고, Cds 와 CdSe 의 질량비가 1:0, 9:1, 8:2, 7:3, 6:4, 5:5일 때 응답파장은 각각 500nm, 520nm, 540nm, 570nm, 620nm, 660nm였다. 또한 주파수 특성을 나타내는 응답시간은 오름시간과 감쇠시간이 각각 30관 20ms 정도 이였으며 최대허용 소비 전력은 80mw 이상이었다. 이상과 같이 인쇄/소결 방법으로 제작된 광전도 셀은 $cucl_2$ 양이 CdSSe 1g 당 0.06~0.10 mg 정도 주입되면 센서로써 좋은 특성을 나타내었다.

$CdS_{0.69}Se_{0.31}$ single crystal grown by sublimation method. Hall effect measurement were carried out by the Van der Pauw method. The measurement values under the temperature were found to be carrier density $n=1.95{\times}10^{23}m^{-3}$, Hall coeffcient $RH=3.21{\times}10^{-5}m^3/c$, conductivity ${\sigma}=362.41{\Omega}^{-1}m^{-1}$, and Hall mobility ${\mu}=1.16{\times}10^{-2}m^2/v.s.$ Heterojunction solar cells of $n-CdS_{0.69}Se_{0.31}/p-Cu_{2-x}S_{0.69}Se_{0.31}$ were fabricated by the substitution reaction. The open-circuit voltage, short-circuit currint density, fill factor and power conversion efficiency of $n-CdS_{0.69}Se_{0.31}/p-Cu_{2-x}S_{0.69}Se_{0.31}$ heterojunction solar cell under $80mW/cm^2$ illumination were found to be 0.41V, $19.5mA/cm^2$, 0.75 and 9.99%, respectivity.

The stochiometric composition of $AgGaS_2$ polycrystal source materials for the $AgGaS_2/GaAs$ epilayer was prepared from horizontal furnace. From the extrapolation method of X-ray diffraction patterns it was found that the polycrystal $AgGaS_2$ has tetragonal structure of which lattice constant $a_0$ and $c_0$ were 5.756 ${\AA}$ and 10.305 ${\AA}$, respectively. $AgGaS_2/GaAs$ epilayer was deposited on throughly etched GaAs (100) substrate from mixed crystal $AgGaS_2$ by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $590^{\circ}C$ and $440^{\circ}C$ respectively. The crystallinity of the grown $AgGaS_2/GaAs$ epilayer was investigated by the DCRC (double crystal X-ray diffraction rocking curve). The optical energy gaps were found to be 2.61 eV for $AgGaS_2/GaAs$ epilayer at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation, then the constants in the Varshni equation are given by ${\alpha}=8.695{\times}10^{-4}eV/K$, and $\beta$=332 K. From the photocurrent spectra by illumination of polarized light of the $AgGaS_2/GaAs$ epilayer, we have found that crystal field splitting $\Delta$ Cr was 0.28 eV at 20 K. From the PL spectra at 20 K, the peaks corresponding to free and bound excitons and a broad emission band due to D-A pairs are identified. The binding energy of the free excitons are determined to be 0.2676 eV and 0.2430 eV and the dissociation energy of the bound excitons to be 0.4695 eV.

Recently, carbon nanotubes(CNTs) have been demonstrated to possess remarkable mechanical and electronic properties, in particular, for field emission applications. Its high aspect ratio and extremely small diameter, hollowness, together with high mechanical strength and high chemical stability, are advantages for use in field emitter. In this paper, we demonstrate electrical discharge properties from carbon nanotube cathode electrodes to use as an emitter electrode of vacuum gauges. Vertically aligned $2{\times}2mm^2$ CNT arrays on the silicon substrate were synthesized by the thermal CVD method on Fe catalytic metal, and a glass patterning by the sand blast method and the silicon/glass anodic bonding processes were applied to make samples with 2 electrodes. The field emission was examined under the vacuum range of $10^{-3}$ Torr.

본 논문에서는 DNA를 이용한 나노 소자에 응용하기 위하여, photo-lithograpy를 사용하여 나노크기(<100)의 간격을 갖는 금 전극을 제작하였다. 그리고 제작되어진 되어진 나노 전극위에 2-Amino ethanthiol(AET)를 코팅하여 AET와 $\lambda$-DNA 사이의 정전기적 상호 작용을 이용, 금 나노전극 사이에 간단하고 고착율을 높이는 실험을 하였다. SEM(Scanning Electron Microscope) 분석을 통해 나노 크기의 전극 간격을 확인하였고, 두 전극사이에 연결되어진 $\lambda$-DNA는 AFM(Atomic force microscope)을 확인하였다.

본 연구는 싱크로트론 방사광의 단색광 (monobeam)을 이용한 영상을 획득하였다. 영상센서로서 CMOS를 사용하였으며 센서 앞단에는 형광체 (phosphor)를 이용하여 방사광에 대한 빛의 신호로서 영상을 획득하였다. 사용된 싱크로트론 방사광의 beam size는 $5mm{\times}2mm$ 이며 ion chamber를 통한 beam intensity 는 $10{\times}10^{-7}$이다. 형광체는 각각 ZnS(Cu:Al), ZnS(Ag,Al), $BiTiO_3$, $Y_2O_2S(Tb)$로서 4가지를 사용하였으며 여기에 사용된 형광체는 기계식 스크린 프린팅 (Screen Printing) 방식으로 직접 제조하였다. 두께는 모두 동일하게 $10{\mu}m$이며 각각에 대한 PL(Photoluminescence)을 측정하여 분석하였다. object로는 물고기와 20linepair를 사용하였으며 CMOS센서를 이용하여 각각의 phosphor에 대하여 영상을 획득하였다. 영상의 평가는 20line pair 영상의 MTF를 이용하였다. 각각의 형광체에 대한 MTF는 5 lp/mm 에서는 0.5650, 0.2150, 0.7890, 0.3840 이며 10 lp/mm 은 0.4500, 0.0900, 0.2510, 0.1500이고 15 lp/mm 는 0.1900, 0.0300, 0.1430, 0.0500이며 마지막으로 20 lp/mm 은 0.0810, 0.004, 0.0500, 0.0320의 MTF 값을 나타내었다. $10{\mu}m$ 두께에 대하여 ZnS(Cu:Al)이 가장 좋은 MTF의 값을 나타내었다.

본 논문은 CdS의 소성 온도가 방사선 검출 특성에 미치는 영향을 조사하였다. CdS 센서는 스크린 프린터 방식을 이용해 $40{\mu}m$의 두께로 제조하였다. XRD 와 SEM을 이용하여 형성된 CdS 필름의 구조 및 형상을 분석하였다. 제조된 CdS 센서에 대해 X선 반응 특성을 조사하기 위해 I-V 측정을 수행하였다. 인가 전압에 따른 Dark current, x-ray sensitivity 및 선량에 따른 Linearity을 측정한 결과 CdS 센서가 $450^{\circ}C$이상 소성시 방사선에 대한 우수한 검출 특성을 보였다.

In this study, the purpose is to verified the feasibility to develope Hybrid x-ray detector in order to resolve problems of direct and indirect x-ray detectors. The properties of X-ray detector depend on absorption of X-ray, charge generation by x-ray photon, leakage current. In this study, CdS was used as photoconductor, and $Y_2O_2S:Tb$ as x-ray phosphor was formed on CdS in order to embody Hybrid structure. And Screen printing was used to form Muli-layer. Characteristics of this specimen were analyzed by using SEM, and XRD. And Photoluminescence spectrum of $Y_2O_2S:Tb$, leakage current, with respect to applied voltages, output charge with respect to applied voltages, and X-ray sensitivity were measured. Also, linearity with respect to dose was measured. Leakage current was similar with direct digital x-ray detector, but sensitivity of the hybrid structure is much better than the single-layer structure.

본 논문은 스크린 프린트 방식을 이용하여 두께 $18{\mu}m$의 ZnS:(Cu,Al) 필름을 제조하여 미세구조와 결정성을 분석하고 형광체로써의 특성을 평가하였다. 영상획득에는 포항 가속기 연구소의 싱크로트론을 이용하였으며 CMOS 영상 센서를 사용하여 DR의 간접방식을 구현하였다. 특성 평가를 위해 SEM 측정, 발광 강도 측정을 하였고, 단색광(Beam size $5mm{\times}2mm$)을 사용하여 test phantom 영상과 물고기 영상을 획득하였다. 획득한 영상의 평가를 위해서 test phantom 영상의 MTF 측정을 하였다 제조된 ZnS:(Cu,Al) 필름의 표면은 육방정계 구조를 가졌으며, 5lp/mm는 73.8%, 10lp/mm는 38.9%, 15lp/mm는 15.4%, 20lp/mm는 12.2%의 MTF를 가졌다. 물고기 영상을 통하여 ZnS:(Cu,Al) 필름을 이용한 고해상도 미세구조영상 획득의 가능성을 확인하였다.

Mono-crystalline silicon(mono-Si) is both abundant in our environment and an excellent material for Si device applications. However, single crystalline silicon solar cell has been considered to be expensive for terrestrial applications. For that reason, the last few years have seen very rapid progress in the research and development activities of layer transfer(LT) processes. Thin film Si layers which can be detached from a reusable mono-Si wafers served as a substrate for epitaxial growth. The epitaxial films have a very high efficiency potential. LT technology is a promising approach to reduce fabrication cost with high efficiency at large scale since expensive Si substrate can be recycled. Low quality Si can be used as a substrate. Therefore, we propose one of the major technologies on fabricating thin film Si substrate using a LT. In this paper, we study the LT method using the electrochemical etching(ECE) and solid edge.

Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). we investigated the performance of $WO_3$ CMP used silica slurry, ceria slurry, tungsten slurry. In this paper, the effects of addition oxidizer on the $WO_3$ CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity.

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis of used slurry.

We have grown GaN layers with in-situ SiN mask by metal organic chemical vapor deposition (MOCVD) and study the characteristic of the GaN layer. We have changed the deposition time of SiN mask from 45s to 5min and obtain th optimum condition in 45s. The PL intensity of GaN with SiN mask improved 2 times to that without SiN mask and the carrier concentraion increased from $3.5{\times}10^{16}cm^{-3}$ to $1.8{\times}10^{17}cm^{-3}$. We have thus shown that the SiN mask improved significantly the optical properties of the GaN layer.

In this study AlN/Al thin films were prepared at various conditions, such as $N_2$ gas flow rate $[N_2/(N_2+Ar)]$ from 0.6 to 0.9, a substrate temperature ranging from room temperature to $300^{\circ}C$ and working pressure 1mTorr. We estimated crystallographic characteristics and c-axis preferred orientations of AlN/Al thin films as function of Al electrode surface roughfness. The optimal processing conditions for Al electrode were found at substrate temperature of $300^{\circ}C$, sputtering power of 100W and a working pressure of 2mTorr. In these conditions, we obtained the c-axis preferred orientation of $AlN/Al/SiO_2/Si$ thin film about 4 degree.

방사선 투시조영 촬영 시 사용되는 방호복의 차폐효율 증가와 경량화는 오랜 시간 연구 대상이 되었다. 이러한 방호복의 질적 향상을 위하여 연구한 결과는 다음과 같다. Apron의 규격인 납 당량 0.25mm에 해당하는 투과선량은 5.2%로 나타났으며, 시료 Sn, Ni, Ti, Cu의 방사선 차폐 효율은 Sn이 가장 높게 나타났다. 증착시료 Sn+Pb 방법에서는 Sn 0.18mm와 Pb 0.1mm, Pb+Sn 방법에서는 Pb 0.1mm와 Sn 0.36mm에서 Apron의 규격인 납 0.25mm 두께로 나타났다. 증착시료 Sn+Pb는 Apron의 규격인 0.25mm 납 당량보다 차폐효율이 높고, 면적당 무게가 가벼워 방호복 물질로 적합한 것으로 사료된다.

In this paper, evaluation of physical properties about dielectric relaxation phenomena by the detection of the surface pressures and displacements current on the monolayer films of phospolipid monomolecular DLPC, DMPC using pressure stimulus. As a result, the changed surface pressure, displacement current and the transition forms of dipole moment of phospolipid monomolecular in area per molecular by pressure stimulus were conformed well. It was known that the monolayers by linear relationship for decision of dielectric relaxation time between compressure speed $\alpha$ and molecule area $A_m$ By according to the linear relationship relation get that frictional constant $\xi$, DLPC was $1.89{\times}10^{-19}$[Js] and DMPC was $0.722{\times}10^{-19}$[Js]. It is found that the phospolipid monolayer of dielectric relaxation takes a little time and depend on the molecular area.

In this paper, we proposed a method to shift the resonant frequency by applying the electric field to microstrip patch antenna using piezoelectric substrates. We fabricated microstrip patch antenna using Y-cut LiNbO3, Quartz and FR-4 substrates. We designed and simulated the microstrip antennas by Ensemble V 7.0 of the simulation too1. We observed the resonant frequency by DC applied electric field in a microstrip patch antenna. When the electric field was 300 V/mm, the resonant frequency agile of Y-cut LiNbO3 microstrip patch antennas were 29 MHz. When the electric field was 400 V/mm, the frequency agile of X-cut, Y-cut and Z-cut quartz microstrip patch antennas were 55.2 MHz, 34.2 MHz and 28.0 MHz, respectively. However, when the electric field was 400 V/mm, the resonant frequency of FR-4 microstrip patch antenna does not changed. It was shown that the resonant frequency agile of Y-cut and Z-cut quartz microstrip patch antennas are due to piezoelectric phenomenon not to be permittivity.

The research on the porous silicon having low wafer stress during the oxidation process in IPOS(Isolation by Porous Oxidized Silicon) were carried out. Fine pores with less than 100A of diameter were found in the porous silicon which from p-type Si by electrochemical etching. In this study, it is possible to make the porous silicon with 59% of porosity.

In this paper, a novel processing technique for fabrication of high-temperature MEMS based on polymer-derived SiCN microstructures is described. PDMS molds are fabricated on SU-8 photoresist using standard UV-photolithographic processes. Liquid precursors are injected into the PDMS mold. And then, the resulting solid polymer structures are crosslinked under isostatic pressure, and pyrolyzed to form a ceramic capable of withstanding over $1500^{\circ}C$. These fabricated SiCN structures would be applied for high-temperature applications, such as heat exchanger and combustion chamber.

This paper describes the design, fabrication and characteristics of a piezoelectric valve using MCA(Multilayer ceramic actuator). The MCA valve, which has the buckling effect, consists of three separate structures; MCA, a valve actuator die and an a seat die. The design of the actuator die was done by FEM modeling and displacement measurement, respectively. The valve seat die with 6 trenches was made, and the actuator die, which is driven to MCA under optimized conditions, was also fabricated. After Si-wafer direct bonding between the seat die and the actuator die, MCA was also anodic bonded to the seat/actuator die structure. PDMS sealing pad was fabricated to minimize a leak-rate. It was also bonded to seat die and SUS package. The MCA valve shows a flow rate of 9.13 sccm at a supplied voltage of 100 V with a 50 % duty cycle, maximum non-linearity was 2.24 % FS and leak rate was $3.03{\times}10^{-8}\;pa{\cdot}m^3/cm^2$. Therefore, the fabricated MCA valve is suitable for a variety of flow control equipment, a medical bio-system, automobile and air transportation industry.

In this study, the characteristics of 3C-SiC ohmic contact were investigated. Titanium-tungsten(TiW) films were used for contact metalization. The ohmic contact resistivity between 3C-SiC and TiW was measured by HP4155 and then calculated with the circular transmission line method(C-TLM). And also the physical properties of TiW and the interface between TiW and 3C-SiC were analyzed using XRD and AES. TiW films make a good role of a diffusion barrier and their contact properties with 3C-SiC are stable at high temperature.

We treated $O_2$ plasma on ITO thin film using RIE (Reactive Ion Etching) system, and analyzed the ingredient of ITO thin film according to change of processing conditions. The ingredient analysis of ITO thin film was used by EDS (Energy Dispersive Spectroscopy) and XPS (X-ray Photoelectron Spectroscopy) to compare and analyze the ingredient of bulk and surface. We measured electrical resistivity using Four-Point-Probe and calculated sheet resistance, and ITO surface roughness was measured by using AFM (Atomic Force Microscope). Finally, we fabricated OLEDs (Organic Light-Emitting Diodes) device using substrate that was treated optimum ITO surface. The result of the study for electrical and optical properties using I V L System (Flat Panel Display Analysis System), we confirmed that electrical properties (I-V) and optical properties (L-V) were improved.

Molecular self-assembled of surfactant viologens are recently interesting because they can be from functional electrodes as well as micelle assemblies which can be profitably utilized for display devices, electrochemical studies and electrocatalysis as electron acceptor or electron mediator. The electrochemical behavior of self-assembled viologen monolayer on Au electrode surface has been investigated with QCM which has been known as nano-gram order mass detector. A monolayer of viologen is immobilized on the gold electrode surface and the normal potentials corresponding to the to the successive one-electron transfer processes of the viologen actives are two peaks in 0.1mol/l phosphate buffer solution respectively. These result suggest that the viologen SAMs are stable and well-behaved monolayers.

In this study, leed-free piezoelectric ceramics were investigated for pressure sensor applications as a function of the amount of $La_2O_3$ addition at BNKT system. With increasing amount of $La_2O_3$ addition, density and dielectric constant were increased up to 0.9wt% addition and decreased after 0.9wt% addition, electromechanical coupling factor$(k_p)$ and mechanical quality factor$(Q_m)$ showed the maximum values at 0.2wt% addition and decreased after 0.2wt% addition. The $k_p$, density, dielectric constant and $Q_m$ were showed the optimum values of 0.40, $5.71g/cm^3$, 768 and 118 at $La_2O_3$ 0.2wt% addition, respectively.

The number of layers in rigid PCB(printed circuit board) is restricted, so the number of components can be embedded in module is restricted also. But using flexible multilayer PCB, the layers over than 7 can be evaluated. In this study, to verify the possibility of application of flexible multilayer PCB to RF modules, multilayered embedded capacitor is fabricated and analyzed. The characteristics of embedded capacitor is analyzed and compared to that of MLCC and LTCC capacitor. Embedded capacitor has better electrical features than MLCC and compatible one to LTCC capacitor.

The $Pb(Zr_{0.4}Ti_{0.6})O_3/Pb(Zr_{0.6}Ti_{0.4})O_3$ [PZT(4060)/(6040)] heterolayered thin films were deposited by RF sputtering method on the $Pt/TiO_2/SiO_2/Si$ substrate. The effects of the structural and dielectric properties of PZT heterolayered thin films were investigated. The MFM(Metal Ferroelectric Metal) type capacitors were made using the PZT(6040)/(4060) heterolayered thin films deposited with optimum deposition condition. An enhanced dielectric property was observed in the PZT(4060)/(6040) thin films. Investigating the dielectric constant and dielectric loss characteristics. the application for the next-generation dielectric thin films and memory devices were studied.

Ferroelectric $(Ba_xSr_{1-x})TiO_3$ (BST) thin films have been deposited on (001) MgO single crystals by a pulsed laser deposition (PLD) method. The structure of deposited BST thin films were investigated by an x-ray diffractometer. Calculated c-axis lattice parameters of the BST films exhibit a strong lattice distortion, which was not observed in ceramic BST at room temperature. This lattice distortion of BST has been attributed to strains caused by lattice constant difference between film and substrate, oxygen vacancies in BST film, and thermal expansion difference between film and substrate. Ferroelectric properties at 10 GHz have been measured using a HP 8510C vector network analyzer. Dielectric properties, capacitance tunability and quality factor, of the interdigitaed capacitors fabricated on BST films were calculated from the measured s-parameters. Two distinct behaviors in structural, opitical, and microwave properties of BST films were observed; below and above 200 mTorr of oxygen pressure in the deposition chmber.

In this study, to develop the composition ceramics for the Ultrasonic vibrator, $Pb(Mn_{1/3}Nb_{2/3})O_3Pb(Zr.Ti)O_3$ system ceramics were manufactured as a function of PCN substitution. Its dielectric and piezoelectric characteristics were investigated. With increasing the amount of PCN substitution, electromechanical coupling factor(kp) were increased until 3mol% PCN and that after decreased. mechanical quality factor(Qm) showed the maxinum value at 2mol% PCN. Eletromechanical coupling factor, mechanical quality factor and dielectric constant were showed optimum value at PCN 2mol% as 0.58, 1630 and 1407, respectively for ultrasonic vibrator applications.

MLCC의 주재료인 $BaTiO_3$는 금속전극의 산화를 방지하기 위해 환원분위기에서 소결하는데 이는 비화학양론적 조성 및 전기적 성질, 결함 그리고 상의 변화를 가져온다. 본 연구에서는 상의 변화를 다양한 온도 범위에서 BaO 또는 $TiO_2$를 첨가시킨 $BaTiO_3$ powder을 가지고 급냉시킨 후 이를 X-선 회절 분석을 통하여 이들의 이차상 형성 여부 등을 조사하였다. $1320^{\circ}C$에서는 $TiO_2$의 고용도가 BaO의 고용도에 비해 상당히 큰 값을 가짐을 알 수 있었다. 이런 결과를 바탕으로 Ba/Ti 비, 산소분압 및 온도에 따른 $BaTiO_3$의 전기전도도 거동에 의하면, 고용범위내에서 BaO 첨가량이 증가할수록 전기전도도의 최소점은 낮은 산소분압쪽으로 이동함을 관찰하였으며 이는 $Ti^{4+}$빈자리에 따른 산소빈자리가 형성되는 결함 모델로 설명되어진다.

The surge characteristics of $Pr_6O_{11}$-based ZnO varistors consisting of $ZnO-Pr_6O_{11}-CoO-Cr_2O_3-Er_2O_3$ ceramics were investigated with sintering temperature in the range of $1335{\sim}1345^{\circ}C$. As the sintering temperature is raised, the average grain size was marked1y increased in the range of $9.67{\sim}14.07\;{\mu}m$ and the ceramic density was increased in the range of $5.46{\sim}5.59\;g/cm^3$. While, the nonlinear exponent was decreased in the range of 64.9~44.1 and the clamping voltage ratio was improved in the range of 1.99~2.08. The best varistor properties was obtained from the varistors sintered at $1335^{\circ}C$, exhibiting a maximum (64.9) in the nonlinear exponent and a minimum (1.99) in the clamping voltage ratio.

The microstructure, electrical, and clamping voltage characteristics of ZPCCD-based varistors were investigated at sintering time of 2 and 3 h. The average grain size and density of varistor were increased from 15.2 to 19.0 and from 5.5 to 5.6 $g/cm^3$ with sintering time, respectively. The nonlinear exponent was 65.4 for 2 h and 37.4 for 3 h, and leakage current was 0.54 ${\mu}A$ for 2 h and 0.67 ${\mu}A$ for 3 h. The dissipation factor was 0.0397 for 2 h and 0.0457 for 3 h. The clamping voltage ratio at surge current($8/20{\mu}s$) of 10~300 A was increased in the range of 1.56~2.17.

ZnO varistor for transmission class arrester$({\Phi}65{\times}20mm)$ of 10kA(Class 3) grade was recently developed in korea and is tested for the properties by switching surge operating duty test to know the line discharge class and complex surge property in electric properties. To find out changing rate of residual voltage before and after lightning impulse residual voltage testing, the sample is cool to room temperature after finishing switching surge operating duty test, and the rate is good as 1.0~1.7%. The element had been considered as applicable ZnO varistor for electricity transmission from the test results of state conterl, switching surge operating duty, thermal stability and above test. But various test should be required for actual application because this is a part of the to be needed for application.

Unipoled piezoelectric transformers were designed with different input and output area ratios. The voltage step-up ratio increased proportionally with increasing the input area. The piezoelectric transformers operated in each transformer's resonance vibration mode. In this paper, ANSYS(FEM program) was used for analysing piezoelectric transformers. We compared with analysis and experimental results. The voltage step-up ratio showed maximum value in output area of small size. Output characteristics of piezoelectric transformers with various size were simulated. The result of analysis showed 2~7 times higher voltage step-up ratio than a experiment result.

Transducer for ultrasonic linear motor with the symmetric and anti-symmetric modes was studied. The ultrasonic liner motor consists of two Lngevin type piezoelectric vibrators that cross at right angles with each other in tip. In order to excite symmetric and anti-symmetric mode, the transducer must have a 90 degree phase difference of voltage. Therefore, the tip of transducer moves on an elliptical motion. In this paper, the finite element analysis was used. The ultrasonic motor was fabricated using the simulated result and the driving characteristics were measured.

본 연구에서는 광 스케너 반사경(mirror)의 torsion bar모양을 변화시키고, 반사경 밑 양단에 magnet를 장착시켜 낮은 구동전압에서 동작되게 함으로써 Scanner의 효율을 개선하였다. torsion bar의 모양은 I형에서 S형 타입으로 변화시킴으로써 일반적인 광 스케너의 공진주파수(50Hz)보다 낮은 주파수(35.8Hz)에서 높은 반사각(약$10^{\circ}$)을 얻을 수 있었다. 또한 광 스케너에 일반적으로 사용되는 정전 액튜에이터 대신 자기 액튜에이터를 사용함으로써 공기 중의 먼지나 습기 등 외부요인을 감소시켰다.

In this paper, the disk-type piezoelectric transformer for the high power was investigated with the variation of road resistance. The diameter and thickness of a disk-type piezoelectric transformer was 50mm and 4.5mm, respectively. The piezoelectric transformer was composed to PZT-PMN-PSN. The ratio of driving electrode and generating electrode ranges from 1.4:1 to 3:1. The poling direction of driving part and generating part are the same. A voltage step-up ratio increased with increasing the load resistance, $R_L$, so it reached 60 times under no road resistance. also, the maximum efficiency of 97% was obtained.

Suspension effect has been studied by using superconductor of BiPbSrCaCuO ceramics containing $Ag_2O$. It has been c1eared that $Ag_2O$ acts as pinning center which plays an important role to the suspension effect. Magnetic repulsive force which affects a superconductor located in magnetic flux from toroidal magnet has been investigated. It has been concluded that the suspension effect arises from the interaction between the pinning effect and the diamagnetic effect.