This paper describes the interface stability of Ta-Mo alloy metal on $SiO_2$ Alloy was formed by co-sputtering method, and the alloy composition was varied by controlling Ta and Mo sputtering power. When the atomic composition of Ta was about 91%, the measured work function was 4.2eV that is suitable for NMOS gate. To identify interface stability between Ta-Mo alloy metal and $SiO_2$, C-V, FE-SEM(Field Emission-SEM), and XRD(X-ray diffraction) were performed on the samples annealed with rapid thermal processor between $600^{\circ}C$ and $900^{\circ}C$. Even after $900^{\circ}C$ rapid thermal annealing, excellent interface stability and electrical properties were observed. Also, thermodynamic analysis was studied to compare with experimental results.

ABS interface IC for automobiles was designed and their electrical properties were investigated. The voltage regulator was designed to operate in the temperature range from $-20^{\circ}\;to\;120^{\circ}C$ for automobile environment. ABS and brake signal were separated using the duty factor of same frequency or different frequencies. UVLO circuit and constant current circuit were applied for the elimination of noise.

[ $HfO_2$ ] thin films were deposited at $300^{\circ}C$ on p-type Si (100) substrates using $HfO_2(HfO_xN_y)$ as the precursor by plasma-enhanced chemical vapor deposition and were annealed at $300^{\circ}C$ in nitrogen plasma ambient. Compared with $HfO_2$, nitrogen plasma annealed $HfO_2$ show good chemical stability, higher crystallization temperature, lower leakage current and thermal stability. Leakage current density of nitrogen plasma annealed $HfO_2$ is approximately one order of magnitude lower than that of $HfO_2$ for the same EOT. The improvement in electrical characteristics of nitrogen plasma annealed $HfO_2$ can be explained by the better thermal stability due to nitrogen incorporation.

Ta-Ti metal alloy is proposed for alternate gate electrode of ULSI MOS device. Ta-Ti alloy was deposited directly on $SiO_2$ by a co-sputtering method and good interface property was obtained. The sputtering power of each metal target was 100W. Thermal and chemical stability of the electrode was studied by annealing at $500^{\circ}C$ and $600^{\circ}C$ in Ar ambient. X-ray diffraction was measured to study interface reaction and EDX(energy dispersive X-ray) measurement was performed to investigate composition of Ta and Ti element. Electrical properties were evaluated on MOS capacitor, which indicated that the work function of Ta-Ti metal alloy was ${\sim}4.1eV$ compatible with NMOS devices. The measured sheet resistance of alloy was lower than that of poly silicon.

In this paper, a new small size Lateral Trench Electrode Power MOSFET with local doping is proposed. This new structure is based on the conventional lateral power MOSFET. The entire electrodes of proposed device are placed in trench oxide. The forward blocking voltage of the proposed device is improved by 3.3 times with that of the conventional lateral power MOSFET. The forward blocking voltage of proposed device is about 500V. At the same size, a increase of the forward blocking voltage of about 3.3 times relative to the conventional lateral power MOSFET is observed by using TMA-MEDICI which is used for analyzing device characteristics. Because the electrodes of the proposed device are formed in trench oxide respectively, the electric field in the device are crowded to trench oxide. And because of the structure which has a narrow drain doping width, the punch through breakdown can be occurred in higher voltage than that of conventional lateral power MOSFET. We observed that the characteristics of the proposed device was improved by using TMA-MEDICI and that the fabrication of the proposed device is possible by using TMA-TSUPREM4.

The BLT thin film and MgO buffer layer were fabricated using a metalorganic decomposition method and the DC sputtering technique. The MgO thin film was deposited as a buffer layer on $SiO_2/Si$ and BLT thin films were used as a ferroelectric layer. The electrical of the MFIS structure were investigated by varying the MgO layer thickness. TEM showsno interdiffusion and reaction that suppressed by using the MgO film as abuffer layer. The width of the memory window in the C-Y curves for the MFIS structure decreased with increasing thickness of the MgO layer Leakage current density decreased by about three orders of magnitude after using MgO buffer layer. The results show that the BLT and MgO-based MFIS structure is suitable for non-volatile memory FETs with large memory window.

Recently, on power system, it is used to high voltage of transmission and distribution due to safe power supply and have high quality and insulation in order to satisfy excellent insulator. Thus, according to underground of high voltage cable, is occurred break down by ground short. Therefore, it is used to high quality XLPE power cable to interrupt instantaneous voltage drop. If it appear inner defect for cable whose have high quality and insulation, it is reduced rapidly due to concentration of electrical field. After assemble to manufacture, in order to inspect cable condition, it is decided much inspection standard. In this paper, In inner defect of assembling cable at manufacture, for measure the variation of insulation condition by void. it tested the variation of insulating characteristics, using $\phi$-q-n distribution variation in partial discharge experiment.

폴리카보네이트는 내열성과 투명성이 우수한데 비해 내후성이 좋지 않아 황변 및 물성이 저하되고, 내찰상성이 약하여 긁히기 쉬운데다 이물질에 의해 오염되기 쉬워 투명성이 저하되는 문제점이 있다. 이러한 단점을 극복하고, 사용하는 용도에 따라 요구되는 다양한 기능성을 부여하기 위하여 폴리카보네이트 표면에 기능성층을 형성시킴으로써 그 목적을 달성하고자 한다. 본 논문에서는 이온 주입기술을 이용하여, 폴리카보네이트 표면의 전기전도도 특성을 향상시키고, 피부암 및 백내장 등을 유발하는 유해한 자외선 (UV-A, UV-B)을 차단하려 한다. 표면전기전도도의 향상은 이물질로부터 오염되는 정도를 낮추며, 정전기를 방지할 수 있다. PC(Polycarbonate) 표면에 $N^+,\;Ar^+,\;Kr^+,\;Xe^+$ 이온을 에너지 20keV에서 50keV을 사용하여, 주입량 $5{\times}10^{15}\;{\sim}\7{\times}10^{16}\cm^2$ 로 조사하였다. 이온 주입된 PC의 표면을 두 접점 방법의 표면 저항 측정으로 표면전기전도도 특성을 알아보았고, 자외선차단 특성은 UV-Vis 로 분석하였다. 이들 전기적 광학적 특성간의 상관관계를 관찰하고, 이러한 특성을 나타내는 화학적 기능그룹들의 변화를 보기 위해 FTIR 분석법으로 관찰하였다. 이온조사량의 증가에 따라 표면저항은 $10^7{\Omega}/sq$까지 감소하여 표면전기특성을 증가시키며, 자외선 차단 특성은 UV-A를 95%까지 차단하여 인체에 유해한 자외선 차단에 유용함을 확인하였다. 이러한 특성은 PC 표면에 카본 네트워크 형성과 $\pi$전자들의 운동량을 증가시키는 구조로 고분자 사슬들의 결합구조 변형에 의한 것으로 생각된다.블을 가지고 파서를 설계하였다. 파서의 출력으로 AST가 생성되면 번역기는 AST를 탐색하면서 의미적으로 동등한 MSIL 코드를 생성하도록 시스템을 컴파일러 기법을 이용하여 모듈별로 구성하였다.적용하였다.n rate compared with conventional face recognition algorithms. 아니라 실내에서도 발생하고 있었다. 정량한 8개 화합물 각각과 총 휘발성 유기화합물의 스피어만 상관계수는 벤젠을 제외하고는 모두 유의하였다. 이중 톨루엔과 크실렌은 총 휘발성 유기화합물과 좋은 상관성 (톨루엔 0.76, 크실렌, 0.87)을 나타내었다. 이 연구는 톨루엔과 크실렌이 총 휘발성 유기화합물의 좋은 지표를 사용될 있고, 톨루엔, 에틸벤젠, 크실렌 등 많은 휘발성 유기화합물의 발생원은 실외뿐 아니라 실내에도 있음을 나타내고 있다.>10)의 $[^{18}F]F_2$를 얻었다. 결론: $^{18}O(p,n)^{18}F$ 핵반응을 이용하여 친전자성 방사성동위원소 $[^{18}F]F_2$를 생산하였다. 표적 챔버는 알루미늄으로 제작하였으며 본 연구에서 연구된 $[^{18}F]F_2$가스는 친핵성 치환반응으로 방사성동위원소를 도입하기 어려운 다양한 방사성의 약품개발에 유용하게 이용될 수 있을 것이다.었으나 움직임 보정 후 영상을 이용하여 비교한 경우, 결합능 변화가 선조체 영역에서 국한되어 나타나며 그 유의성이 움직임 보정 전에 비하여 낮음을 알 수 있었다. 결론: 뇌활성화 과제 수행시에 동반되는 피험자의 머리 움직임에 의하여 도파민 유리가 과대평가되었으며 이는 이 연구에서 제안한 영상정합을 이용한 움직임 보정기법에 의해서 개선되었다. 답이 없는 문제, 문제 만들기, 일반화가 가능한 문제 등으

This paper presents the results of power spectra using the fundamental and low frequency harmonic components of leakage current waveform to study aging on contaminated EPDM insulator(was serviced during 1997-2001, region Pohang, korea) under salt fog conditions. Experiments have been conducted in the chamber salt fog and at the 16KVrms. The salt contents adjusted as 0g,25g,50g and 75g per liter of deionized water. The onset of dry-band arcing on polymer insulators could be determined by signal processing the low frequency harmonics components. A correlation has been found between the fundamental and low harmonic components of power spectra on leakage current. Where aging could be associated with an increase in the level of both the fundamental and low frequency harmonics components of leakage current. Surface aging for contaminated EPDM insulators occurred when the fundamental component of leakage current was greater then some level On the other hand, when the polymer insulator approached failure, the fundamental component of leakage current reached relatively high values and low frequency harmonics components of the leakage current trended to decrease. The results suggest that both the fundamental and low frequency harmonics of leakage current can be used as a tool to determine both the beginning of aging and before flashover, end of life EPBM insulator in salt fog.

Inorganic polymer based hybrid membranes consisting of zirconium oxide and polydimethylsiloxane (PDMS) have been synthesized by sol-gel processes. The hybrid membranes showed thermal stability and flexibility up to $300^{\circ}C$. The membrane becomes proton conducting polymer electrolyte when added with 12-phosphotungstic acid (PWA). The conductivity of the membranes was measured in the temperature range from room temperature to $150^{\circ}C$ under saturated humidity and a maximum conductivity of $5{\times}10^{-5}\;Sm^{-1}$ was obtained at $150^{\circ}C$.

Crystal structure and microwave dielectric properties of $Ba(Mg_{1/3-x}Nb_{2/3})O_3$ (BMN) ceramics were investigated. $Ba(Mg_{1/3}Nb_{2/3})O_3$ has the 1:2 ordered hexagonal structure. The 1:2 ordering and relative density of specimens increased with small Mg deficiency(x). The variation of Q-value with Mg deficiency is very similar to that of 1:2 ordering and relative density. The highest $Q{\times}f_0$ achieved in this investigation is about 96,000 for $Ba(Mg_{1/3-0.02}Nb_{2/3})O_3$. The improvement of Q-value with Mg-deficiency is related to the increase of degree of ordering and relative density of the specimen.

Tb-doped lead zirconate titanate($Pb_{1.1}(Zr_{0.6}Ti_{0.4})O_3$; PZT) thin films on $Pt(111)/Ti/SiO_2/Si(100)$ substrates prepared by a sol-gel method. Films have a Zr/Ti ratio of 60:40 and perovskite phase structure. The effect on the structural and electrical properties of films measured according to Tb content. Dielectric and ferroelectric properties of PZT thin films were altered significantly by Tb-doping. The PZT thin film with higher dielectric constant and improved leakage current characteristic was obtained by adding 0.3 mol% Tb. At 100 kHz, the dielectric constant and the dielectric loss of the 0.3 mol% Tb-doped PZT thin film were 1611 and 0.24, respectively The remanent polarization(2Pr) of the 0.3 mol% Tb-doped PZT thin film was $61.4\;{\mu}C/cm^2$ and the coercive field was 61.9 kV/cm. Tb-doped PZT thin films showed improved fatigue characteristics comparing to the undoped PZT thin film.

[ $YBa_2Cu_3Ox$ ](YBCO) oxide superconductor was prepared by sol-gel method to improve its superconducting properties, and it was made to be a fine powder, which has the same property of solid state reacted powder. $BaPbO_3$ was synthesized with $BaCO_3$, BaO, PbO, and $PbO_2$ and analyzed by XRD. YBCO superconductor was prepared by use of sol-gelled YBCO powder and additive $BaPbO_3$ and its critical temperature and transition temperature were shown as 91.9 K, 3.7 K respectively in case 20 wt.% $BaPbO_3$ was added to pure sol-gelled YBCO powder.

This study investigated the phase transformation of the $REBa_2Cu_3O_{7-x}$ (RE=Nd, Gd, By) superconductor, and CCT (Continuous-Cooling-Transformation) along with the TTT (Time-Temperature-Transformation) diagrams are suggested according to the isothermal and continuous cooling heat-treatments. According to result of fabricated single crystal of RE-123 superconductor through TSMG method based on phase transformation neted among heat treatment process, when the ionic radius elements was decreased, RE-211 phase was well-distributed. According to result that examine about seed of pretreatment effect of TSMG method, magnetic hysteresis improved when preprocess among oxygen atmosphere in same seed. and used after. Effect of miscut expressed good superconducting special quality in case miscut uses big seed.

The electrophoretic deposition method has the advantage of relatively few fabrication facilities and simple process procedure as well as the economical and technical merit of allowing various forms of deposition and easy control of deposition thickness and wire length. A study, especially electric field and additive, on the optimization method to increase the density of particles and uniformity of their orientation have been performed to overcome the cracking and the porosity problems in the fabricated superconductor.

The control of tilt angle for nematic liquid crystal (NLC) with negative and positive dielectric anisotropy on the rubbed homeotropic polyimide (PI) using baking method by hot plate equipment was investigated. LC tilt angle decreased with increasing baking temperature and time. Especially, the low LC tilt angle of positive type NLC ($\Delta\varepsilon$ >0) on the rubbed homeotropic PI surface by increasing temperature and time was measured. The tilt angle of positive type NLC ($\Delta\varepsilon$ >0) is smaller than that of the negative type ($\Delta\varepsilon$ >0) on rubbed PI with increasing baking temperature and time. We consider that the tilt angle of NLC is decreased due to increasing the steric interaction between horizon component of permittivity $\varepsilon$ = of NLC and the stress of polymer side chain by high temperature.

Carbon nanotubes(CNTs) are grown by using Co catalyst metal. CNTs fabricated by PECVD(plasma enhanced chemical vapor deposition) method are studied in terms of surface reaction and surface structure by TEM and Raman analysing method and are analysed in its electrical field emission characteristics with variation of space between anode and cathode. Acetylene($C_2H_2$) gas is used as the carbon source, while ammonia and hydrogen gas are used as catalyst and dilution gas. The CNTs grown by hydrogen($H_2$) gas plasma indicates better vertical alignment, lower temperature process and longer tip, compared to that grown by ammonia($NH_3$) gas plasma. The CNTs fabricated with Co(cobalt) catalyst metal and PECVD method show the multiwall structure in mid-circle type in tip-end and the inner vacancy of 10nm. Emission properties of CNTs indicate the turn-on field to be $2.6\;V/{\mu}m$. We suggest that CNTs can be possibly applied to the emitter tip of FEDs and high brightness flat lamp because of low temperature CNTs growth, low turn-on field.

The characteristic of single wall carbon nanotube (SW-CNT) and herringbone nano fiber (HB-CNF) emitters was described. SW-CNT synthesized by arc discharge and HB-CNF prepared by thermal CVD were mixed with binders and conductive materials, and then were formed by screen-printing process. In order to obtain efficient field emissions, the surface treatment of rubbing & peel-off was applied to the printed CNT and CNF emitters. The basic structure of FED was of a diode type through fully vacuum packaging. Also, we proposed a new triode type of field emitter using a mesh gate plate having tapered holes and could achieve the ideal triode properties with no gate leakage currents.

We have investigated the generation of pretilt angle for a nematic liquid crystal (NLC) alignment with in-situ photoalignment method on polyimide (PI) surfaces using thin plastic substrates. The LC aligning capabilities and pretilt angle of the thin plastic substrates by in-situ photoalignment method were better than that of the glass substrate by general photoalignment. Also, the LC pretilt angle increased with increasing healing temperature and exposure time.

Carbon nitride ($CN_x$) films were prepared by reactive RF magnetron sputtering system with DC bias at various deposition conditions and the electrical properties were investigated. The films were characterized by fourier transform infrared (FTIR) spectroscopy, and X-ray photoelectron spectroscopy (XPS). The metal-insulator-semiconductor (MIS) capacitor which has $Al/CN_x/Si$ structure was designed and fabricated to investigate the capacitance-voltage (C-V) characteristics. Dielectric constant of carbon nitride films is very small.

Crystalline carbon nitride films have been attempted for an application of humidity sensors. The films were deposited on $Al_2O_3$ substrate having interdigitated electrodes by reactive RF magnetron sputtering system. The film revealed a good humidity-resistance characteristics as well as humidity-capacitance ones in the humidity range of $10\;{\sim}\;95\;RH(%)$. Temperature dependence was also investigated. These results suggest that carbon nitride film have a possibility for a new humidity-sensitive materials.

The dissolved oxygen sensors with thick film type were fabricated for low cost products and the electrical properties were investigated in the different operating temperatures. Pt paste was used for working electrode and Ag/AgCl paste for reference electrode. The fabricated devices have fast response of current changes according to dissolved oxygen concentrations in the applied voltage of $0.6{\sim}0.8V$. This is expected to apply a chip and/or disposal dissolved oxygen sensors.

The electronic structure of ${\beta}-MnO_2$ having impurities in the site of Mn was theoretically investigated by $DV-X_{\alpha}$ (the discrete variation $X{\alpha}$) method, which is a sort of the first principle molecular orbital method using Hatre-Fock-Slater approximation. The used cluster model was $[Mn_{14}MO_{56}]^{-52}$ (M = transient metals). Madelung potential and spin polarization were considered for more exact calculations. As results of calculations, the energy levels of all electron included in the model were obtained. The energy band gap and positions of impurity levies were discussed in association with impurity 34 orbital that seriously affect electrical properties of $MnO_2$. It was shown that the energy band gap decreased with the increase of the atomic number of transient metal impurity.

The inductively coupled plasma(ICP) etching process was selected to fabricate RF Surface Acoustic Wave(SAW) filters and a Pt thin film was sputtered on a $LiTaO_3$ substrate applied to electrode materials to reduce the spurious response and improve the power durability. Steep sidewall pattern was achieved employing $C_4F_8/Ar/Cl_2$ gas chemistry. We investigated an etching mechanism and parameter dependence of the Pt thin film about $C_4F_8$ addition. Sidewall etch angle was about $80^{\circ}$ at the $C_4F_8$ 20% mixing ratio. Fabricated SAW filter is consists of some series and parallel arm SAW resonators which work as impedance elements and show capacitance characteristics at out of the passband. It can be modified for $800{\sim}900\;MHz$ RF filters. External matching circuits were unnecessary.

Currently, molecular devices are reported utilizing active self-assembled monolayers containing the nitro group as the active component, which has active redox centers[1]. We confirm the electrical properties of 4,4-di(ethynylphenyl)-2'-nitro-1-benzenethiolate. To deposit the SAM layer onto gold electrode, we transfer the prefabricated Au(111) substrates into a 1mM self-assembly molecules in THF solution. Au(111) substrates were prepared by ion beam sputtering method of gold onto the silicon wafer. As a result, we measured current-voltage curve using ultra high vacuum scanning tunneling microscopy (UHV STM), I-V curve also clearly shows several current peaks between the negative bias region (-0.3958V) and the positive bias region (0.4658V), respectively.

There is a growing need for a nonvolatile memory technology with faster speed than existing nonvolatile memories. $T_c$(crystallization temperature) is confirmed by measuring the conductivity with the varying temperature. The sample is heated on the hotplate and slow down to the room-temperature. We prepared Te based alloy bulk. The materials can be used for nonvolatile random access memory.

[ $Hg_{1-x}Cd_xTe$ ] (MCT) was grown by hot wall epitaxy method. Prior to the MCT growth, the CdTe (111) buffer layer was grown on the GaAs substrate at the temperature of 590 C for 15 min. When the thickness of the CdTe buffer layer was 5 m or thicker, the full width at half maximum values obtained from the x-ray rocking curves were found to significantly decrease. After a good quality CdTe buffer layer was grown, the MCT epilayers were grown on the CdTe (111) /GaAs substrate at various temperature in situ. The crystal quality for those epilayers was investigated by means of the x-ray rocking curves and the photocurrent experiment. The photoconductor characterization for the epilayers was also measured. The energy band gap of MCT was determined from the photocurrent measurement and the x composition rates from the temperature dependence of the energy band gap were turned out.

The ZnSe epilayers were grown on the GaAs substrate by hot wall epitaxy. After the ZnSe epilayers treated in the vacuum-, Zn-, and Se-atmosphere, respectively, the defects of the epilayer were investigated by means of the low-temperature photoluminescence measurement. The dominant peaks at 2.7988 eV and 2.7937 eV obtained from the PL spectrum of the as-grown ZnSe epilayer were found to be consistent with the upper and the lower polariton peak of the exciton, $I_2$ ($D^{\circ}$, X), bounded to the neutral donor associated with the Se-vacancy. This donor-impurity binding energy was calculated to be 25.3 meV. The exciton peak, $I_1^d$, at 2.7812 eV was confirmed to be bound to the neutral acceptor corresponded with the Zn-vacancy. The $I_1^d$ peak was dominantly observed in the ZnSe/GaAs:Se epilayer treated in the Se-atmosphere. This Se-atmosphere treatment may convert the ZnSe/GaAs:Se epilayer into the p-type. The SA peak was found to be related to a complex donor like a $(V_{Se}-V_{Zn})-V_{Zn}$.

The stochiometric $AgGaSe_2$ polycrystalline mixture of evaporating materials for the $AgGaSe_2$ single crystal thin film was prepared from horizontal furnance. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal and semi-insulating GaAs(100) wafer were used as source material and substrate for the Hot Wall Epitaxy (HWE) system, respectively. The source and substrate temperature were fixed at $630^{\circ}C$ and $420^{\circ}C$, respectively. The thickness of grown single crystal thin films is $2.1{\mu}m$. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. From the photoluminescence measurement of $AgGaSe_2$ single crystal thin film, we observed free excition ($E_x$) observable only in high quality crystal and neutral bound excition ($D^{\circ}$,X) having very strong peak intensity. And, the full width at half maximum and binding energy of neutral donor bound excition were 8 meV and 14.1 meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.

The number of grain is determined based on Poisson distribution in respectively different active channel and it is converted to grain size which affects to the mobility and threshold voltage. the acquired data is applied to the SPICE for observing the variation of I-V characteristic with several channel lengths. we can confirm the effect on device.

핸드폰에 장착된 반투과형 LCD (Liquid Crystal Display) 패널에서 반사판을 제거하면 투과형 LCD 마스크로 이용할 수 있다. LCD 패널의 광 흡수 실험에서 얻은 스펙트럼을 참고하여 다양한 파장대의 광원으로 리소그래피 하였다. 컴퓨터 이미지 프로그램으로 편집한 그림을 핸드폰 전용 통신 케이블을 통하여 LCD 패널로 전송하여, 다양한 모양의 패턴을 기판위에 전사하는데 성공하였다. 픽셀간의 경계가 현상되어 끊어지는 패턴이 형성되는 LCD 마스크의 단점을 극복하여 연속적인 패턴결과를 얻는데도 성공하였다. 이로부터 프로젝션 리소그래피의 응용에 쉽게 접근할 수 있는 발판이 마련된 것으로 생각된다.

Copper has attractive properties as a multi-level interconnection material due to lower resistivity and higher electromigration resistance as compared with Alumina and its alloy with Copper(0.5%). Among a variety of agents in Copper CMP slurry, $H_2O_2$ has commonly been used as the oxidizer However. $H_2O_2$ is so unstable that it requires stabilization to use as oxidizer Hence, stabilization of $H_2O_2$ is a vital process to get better yield in practical CMP process. In this article the stability of Hydrogen Peroxide as oxidizer of Copper CMP slurry has been investigated. When alumina abrasive was used, $\gamma$-particle Alumina C had a better stability than $\alpha$-particle abrasive. As adding KOH as pH buffering agent, $H_2O_2$ stability in slurry decreased. Urea hydrogen peroxide was used as oxidizer, an enhanced stability was gotten. When $H_3PO_4$ as $H_2O_2$ stabilizer was added, the decrease of $H_2O_2$ concentration in slurry became slower. Even though adding $H_2O_2$ in slurry after bead milling lead to better stability than in advance of bead milling, it had a lower dispersibility.

BST thin films have a good thermal-chemical stability, insulating effect and variety of phases. However, BST thin films have problems of the aging effect and mismatch between the BST thin film and electrode. Also, due to the high defect density and surface roughness at grain boundarys and in the grains, which degrades the device performances. In order to overcome these weakness, we first applied the chemical mechanical polishing (CMP) process to the polishing of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interface. BST ferroelectric film was fabricated by the sol-gel method. And then, we compared the structural characteristics before and after CMP process of BST films. We expect that our results will be useful promise of global planarization for FRAM application in the near future.

Cu+ ions drift diffusion in formal oxide film and SiOCH film for interlayer dielectric is evaluated. The diffusion is investigated by measuring shift in the flatband voltage of capacitance/voltage measurements on Cu gate capacitors after bias temperature stressing. At a field of 0.2MV/cm and temperature $200^{\circ}C,\;300^{\circ}C,\;400^{\circ}C,\;500^{\circ}C$ for 10min, 30min, 60min. The Cu+ ions drift rate of $SiOCH(k=2.85{\pm}0.03)$ film is considerable lower than termal oxide. As a result of the experiment, SiOCH film is higher than Thermal oxide film for Cu+ drift diffusion resistance. The important conclusion is that SiOCH film will solve a causing reliability problems aganist Cu+ drift diffuion in dielectric materials.

The spin density of ${\beta}-MnO_2$ structure was theoretically investigated by $DV-X_{\alpha}$ (the discrete variation $X{\alpha}$) method, which is a sort of the first principle molecular orbital method using Hatre-Fock-Slater approximation. The used cluster model was $[Mn_{14}O_{56}]^{-52}$. The ${\beta}-MnO_2$ is a paramagnetic oxide semiconductor material having the energy band gap of 0.18 eV and an 3 loan-pair electrons in the 3d orbital of an cation. This material exhibits spin-only magnetism and has the magnetic ordering temperature of 94 K. Below this temperature its magnetism appears as antiferromagnetism. The calculations of electronic state showed that if the initial spin condition of input parameters changed, the magnetic state changed from paramagnetic to antiferromagnetic. When d orbital of all Mn atoms in cluster had same initial spin state as only up spin, paramagnetic spin density distribution appeared by the calculation. On the other way, d orbital had alternately changed spin state along special direction the resulted spin distribution showed antiferromagnetism.

Ashing of photoresist was investigated in dielectric barrier discharges in atmospheric pressure by changing applied voltage, frequency, flow rate. we analyzed the plasma by Optical Emission Spectroscopy(OES) to monitor the variation of active oxygen species. Another new peaks of oxygen radical is observed by addition of argon gas. This may explain the increase in ashing rate with argon addition. With the results of Optical Emission Spectroscopy(OES), we can find the optimized ashing conditions. MIS capacitor for monitoring charging damage by the plasma was also studied. The results suggest the dielectric barrier discharges(DBD) can be an efficient, alternative Plasma source for general surface processing.

The stochiometric mixture of evaporating materials for the $CuInTe_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CuInTe_2$ mixed crystal was deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were $610^{\circ}C\;and\;450^{\circ}C$ respectively, and the growth rate of the single crystal thin films was about $0.5{\mu}m/h$. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction(DCXD). From the photocurrent spectra, we have found that values of spin orbit coupling ${\Delta}So$ and crystal field splitting ${\Delta}Cr$ ware $0.283{\underline{3}}eV\;and\;0.120{\underline{0}}eV$, respectively.

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_2O_3$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193nm) excimer laser. The substrate temperatures was $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}10^{16}\;cm^{-3}\;and\;299\;cm^2V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;3.3973\;eV\;-\;(2.69{\times}10^{-4}\;eV/K)T^2/(T\;+\;463K)$. After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Zn}$, Vo, $Zn_{int}$, and $O_{int}$ obtained by PL measurements were classified as a donors or accepters type.

The electrothermal simulation of high voltage LIGBT(Lateral Insulated Gate Bipolar Transistor) in thin Silicon on insulator (SOI) and Silicon on sapphire (SOS) for thermal conductivity and sink is performed by means of MEDICI. The finite element simulations demonstrate that the thermal conductivity of the buried oxide is an important parameter for the modeling of the thermal behavior of silicon-on-insulator (SOI) devices. In this paper, using for SOI LIGBT, we simulated electrothermal for device that insulator layer with $SiO_2\;and\;Al_2O_3$ at before and after latch up to measured the thermal conductivity and temperature distribution of whole device and verified that SOI LIGBT with $Al_2O_3$ insulator had good thermal conductivity and reliability

We report the material and electrical properties of $CoSi_2$ and $NiSi_2$contacts to n-type 4H-SiC depending on the post-annealing and the metal covering conditions. The Ni and Co silicides are deposited by RF sputtering with Ni/Si/Ni and Co/Si/Co films separately deposited on 4H-SiC substrates. The deposited films are annealed at $800\;^{\circ}C$ in $Ar:H_2$ (9:1) gas ambient. Results of the specific surface resistivity measurements show that the resistivity of the Co-based metal contact was the one order lower than that of the Ni-based contact. The specific contact resistance was measured by a transmission line technique, and the specific contact resistivity of $1.5{\times}10^{-6}\;{\Omega}\;cm^2$ is obtained for Co/Si/Co metal structures after a two-step annealing; at $550\;^{\circ}C$ for 10 min and $800\;^{\circ}C$ for 3min. The physical properties of the contacts were examined by using XRD and AES, and the results indicate that the Co-based metal contacts have better structural stability of silicide phases formed after the high temperature annealing.

새로운 전력 반도체 소자로 주목받고 있는 MOS 구동 사이리스터 중 대 전력용으로 사용되는 EST는 높은 전류 밀도에서 게이트에 의한 전류 조절이 가능할 뿐만 아니라 다른 MOS 구동 사이리스터 소자와는 달리 전류 포화 특성을 지녀 차세대 전력 반도체로 각광 받고 있는 소자이다. 하지만 소자의 동작 시에 스냅-백 특성을 지녀 전력의 손실을 유발할 뿐만 아니라 오동작을 일으킬 가능성이 있다. 따라서 본 논문에서는 기존의 EST에서 스냅-백 특성의 제거와 저지 전압의 향상을 위해 트랜치 전극을 가지는 새로운 구조를 제안하고 게이트 전극과 캐소드 전극의 트랜치 화에 따른 특성 변화 양상을 살펴보기 위해 게이트 전극만 트랜치로 구성한 경우와 캐소드 전극만 트랜치로 구성한 경우를 시뮬레이션을 통해 해석하였다. 그 결과 기존의 EST에서 게이트 전극만을 트랜치 형태로 바꾼 경우에는 스냅-백 특성이 1.1 V의 애노드 전압과 91 A/cm2의 전류 밀도에서 발생하고 순방향 저지 모드 시의 저지 전압은 800 V로 기존의 257에 비해 월등한 전기적 특성 향상을 가져왔다. 그러나 기존의 EST에서 캐소드 전극만을 트랜치 형태로 바꾼 경우에는 스냅-백 특성이 1.72 V의 애노드 전압과 25 A/cm2의 전류 밀도에서 발생하고 순방향 저지 모드 시의 저지 전압은 613 V로 스냅-백 특성은 향상되었으나 저지 전압은 기존의 EST 보다 감소하였다. 결국 기존의 EST에서 게이트 전극만을 트랜치 전극 형태로 구성한 경우에 가장 탁월한 전기적 특성을 갖는 것으로 나타났다.

ITO films on PET substrate were prepared by DC magnetron sputtering method using powdery target with different deposition conditions. In addition, the electrical and optical properties were investigated. As the sputtering power and working pressure were higher, the resistvity of ITO films increased. The optical transmittance deteriorated with increasing sputtering power and thickness. As the working pressure increased, however, the optical transmittance improved at visible region of light. From these results, we could deposited ITO films with $8{\times}10^{-3}\;{\Omega}-cm$ of resistivity and 80% of transmittance at optimal conditions.

The monolayer of oxygen atoms sandwitched between the adjacent nanocrystalline silicon layers was formed by ultra high vacuum-chemical vapor deposition (UHV-CVD). This multi-layer Si-O structure forms a new type of superlattice, semiconductor-atomic superattice (SAS). According to the experimental results, high-resolution cross-sectional transmission electron microscopy (HRTEM) shows epitaxial system. Also, the current-voltage (I-V) measurement results show the stable and good insulating behavior with high breakdown voltage. It is apparent that the system may form an epitaxially grown insulating layer as possible replacement of silicon-on-insulator (SOI), a scheme investigated as future generation of high efficient and high density CMOS on SOI.

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) lyaer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2-CMP$ process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis or used slurry.

Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). we investigated the performance of $WO_3$ CMP used silica slurry, ceria slurry, tungsten slurry. In this paper, the effects of addition oxidizer on the $WO_3$ CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity.

There has been increasing interest in the applications of synthesized molecules of nanometer scale in recent years due to their potential utilization in various fields such as biology, optoelectronics and molecular electronics. In this study, the terpyridine-platinum (II) complex on the periphery of the dendritic carbosilane has been prepared from the reaction of Pt(COD)Cl2 and the 4'-functionalized-(2,2':6',2"-terpyridine) on dendrimers. The self-assembly process was carried out to obtain indivially dispersed dendrimer on Au (111) substrate. It was found that STM was unsuitable to obtain a obvious image of dendrimers. Tapping-mode atomic force microscopy(AFM) has been used to investigate the shape and size of dendrimers individually dispersed on Au (111)substrate. As a result, the imaged single dendrimer show that dendrimer is dome shaped and its size can be measured by tapping-mode AFM.

In this paper, we have been described a new constructing method of multichannel biosensor using self-assembly by magnetic force interaction. A metal particle and an array was fabricated by photolithographic. Biomaterials were immobilized on the metal particle. The array and the particles were mixed in a buffer solution, and were arranged by magnetic force interaction and self-assembly. A quarter of total Ni dots were covered by the particles. The binding direction of the particles was controllable, and condition of particles was almost with Au surface on top. The particles were successfully arranged on the array. The biomaterial activities were detected by chemiluminescence.

A study on the arc resistance and light reflectance of PTFE (polytetrafluoroethylene) nozzle for circuit breaker is presented. PTFE has been used widely as a material for circuit breaker nozzle. PTFE has excellent electrical resistivity, high melt viscosity, chemical inertness, heat resistance and low loss factor. PTFE melts at $327\;^{\circ}C$ but the viscosity is very high above the melting point. In the arcing environment in a circuit breaker, the fraction of the power is emitted out of the arc and reaches the nozzle wall by radiation, causing ablation at the surface and in the depth of the wall. Some fraction of the radiation power emitted out of the arc directly break up the chemical bonds at the surface while some fraction of the radiation power penetrates into the wall, heats up the material to evaporation temperature and causes damages deeper inside the volume of the nozzle. In this paper, some fillers that have endurance in the high temperature arc environment were added into PTFE. Adding some fillers into PTFE was expected to be efficient in improving the endurability against radiation. The light reflectance and arc resistance of PTFE composites were investigated.

This paper presents the electrical properties of PTFE (polytetrafluoroethylene) nozzle for circuit breaker. PTFE has been used widely as a nozzle material for circuit breaker. In the arcing environment in a circuit breaker, radiation is considered to be the major energy transport mechanism from the arc to the wall. The fraction of the radiation power is emitted out of the arc and reaches the nozzle wall, causing ablation at the surface and in the depth of the wall. The energy concentration in the material lead to the depolymerization and eventually lead to the generation of decomposed gas as well as some isolated carbon particles. The generation of the decomposed gas in the depth of the material causes inner explosion. The surface of nozzle becomes uneven. The flow of gas is not uniform due to the unevenness of the surface. Adding some fillers into PTFE is expected to be efficient for improving the endurability against radiation. In this experiment, three kinds of fillers that have endurance in the high temperature environment were added into PTFE. Dielectric constant, dissipation factor, electrical resistivity and dielectric strength of PTFE composites were investigated.

In this paper, mechanical property of electric epoxy with water aging was discussed. We studied mechanical property of elastic resin after absorption in water from 0 to 484 hour. As a result, diffusion factor of elastic epoxy showed $20-21{\times}10^{-4}mm^2/s$ and general epoxy showed $9.5{\times}10^{-4}mm^2/s$. Elastic property increased linearly according to amount of addictives and decreased elastic property according to amount of water absorption. Tensile strength was reduced to add to addictives. It was effected by water absorption of micro-void of elastic epoxy. Hardness inclined to decrease after increasing according to absorbed time.

This paper presents constitution of a moderate price thermography system for on-line measurement. All objects with some temperature above absolute zero radiate in the infrared. The intensities and spectra of the infrared radiated from some object depend on the conditions and temperature distributions on the surface of the objects, and the temperature distributions differ from each others with different undersurface structures. Consequently, infrared radiation is useful for diagnosis of the conditions on the surface and undersurface of electric power apparatus. But the present, because engineers directly measure the temperatures of apparatuses in off-line, the measured data do not always have the information of the past. The proposed system is able to analyze not only the information of the past but the trend of deterioration, and the system is able to compensate for the distortion of surface temperature as to weather conditions. The thermal image histogram is equalized to upgrade observability, and a pan-tilter is adopted to control of direction for any target point.

This paper presents the analyzing method for surface temperature distribution of a cast-resin transformer. For the study, the surface temperature of the transformer winding was measured and analyzed by a infrared thermography system. Alternating voltages were applied to simulate deterioration of the specimen transformer, and the hot-spot on the transformer surface was measured to analyze the condition for the winding. The hot line condition measured to the changes in surface temperature using infrared thermography camera and was set up the based of diagnostic method of the electric power apparatus. The results ould show the possibility of remote diagnosis using internet.

This paper is aimed at determining the e-field distribution by apply voltage of air void, which can be generate air void in the XLPE cable for ultra high voltage. E-field distribution had an effect in XLPE due to the type and position of void, compared and studied. This method of analysis is based on the quasi-static electromagnetic 3D simulation program by boundary element method (BEM): Applied AC 3[kV], discretization of 2000 elements, 4 angular periodicity, The result of experiment indicate that E-field distribution appeared the highest levels on the void position of electrode 2[nm] outer boundary and shape of the smallest inner angle in the void. This will serve to explain the XLPE cable degradation studied of possible, connected cable variation of position and shape of void effects to e-field concentration.

In this paper, we succeeded SNP discrimination of DNA hybridization on microarray using new electrochemical system. Using the electrochemical method with a label-free DNA has Performed DNA chip microarray. This method is based on redox of an electrochemical ligand. We developed scanning system with high performance.

Silicone rubber has very excellent chemical stability and hydrophobicity. A hydrophobic surface can prevent the formation of continuous water films on the surface in wet and heavily contaminated conditions. This phenomenon contributes to the suppression of leakage current and partial discharges on insulator surfaces. Silicone rubber has been used much for housing materials of polymer insulators. ATH is added to the silicone rubber for improvement of its resistance against surface discharge. In this paper, ATH with different particle size and content was added to the silicone rubber during compounding. Silicone rubber was deteriorated by a corona treatment. Hydrophobicity recovery rate after corona treatment and arc resistance of silicone rubber were investigated. Hydrophobicity recovery rate of silicone rubber was evaluated by the measurement of contact angle. Arc resistance was evaluated by measuring weight loss of silicone rubber after arc resistance test. It was observed that the hydrophobicity recovery rate and arc resistance of silicone rubber were different when different particle size and content of ATH were added.

CS와 실란의 반응시 생성된 실란올들이 동종간의 반응에 비하여 실리카 표면과의 반응이 진행되는 효과에 따라서, 그리고 실란들의 종류에 따라 경화밀도와 재료특성이 상당히 달라지게 된다. 본 논문에서는 CS/MTMS 졸반응에서 CS의 종류, CS/MTMS의 함량비, 졸의 반응시간 등을 인자로 하여 졸들을 합성하고 겔화된 도막의 물성들을 조사하였다. 그 결과 MTMS의 함량과 비례하여 친수성은 증가하고 표면조도는 나아지는 것을 알 수 있었고 반응시간에 비례하여 친수성은 감소하고 표면조도는 안 좋아지는 것을 알 수 있었다. 그리고 내열성은 MTMS의 함량이 적을수록 좋은 결과를 나타내었다.

Thermo-plastic has generally bad electrical characteristics at high temperature comparing to thermoset-plastics when the plastic apply to electrical power apparatus as an electrical insulator. To solve the problem, we study engineering plastics such as Polyamide and Polyphthalamide as a base resin. And filler of the engineering plastics is glass fiber. Electrical characteristics studied are permittivity, loss factor and breakdown strength according to temperature and frequency of measuring signal. Electrical characteristics of Polyphthalamide has good temperature and frequency dependency comparing to those of Polyamide.

자동차 점화장치는 전원으로부터 공급된 낮은 전압을 점화코일을 통하여 연소실의 혼합기를 연소시키기에 충분한 고전압을 발생시키는 장치이며, 점화장치의 핵심은 점화코일이다. 이 점화코일은 절연성능이 우수한 절연재료가 사용되지만 고전압의 발생으로 점화코일 내부에서 일어나는 전기적 열화로 인해 누설전류가 흐르게 되어 전기적 고장을 초래할 수 있다. 이로 인하여 절연재료의 수명은 단축되며, 또한 점화코일에 전류가 흐름으로써 코일 내부에서 발생하는 온도변화에 따른 절연열화로 점화코일의 성능이 저하될 수 있다. 따라서 본 연구에서는 점화코일에 사용되고 있는 절연재료에 전압이 인가될 때 발생할 수 있는 비파괴검사의 일종인 부분방전 측정을 통하여 전압변화에 따른 에폭시 성형 점화코일의 위상각($\Phi$) - 방전전하량(q) - 발생빈도수(n)의 특성 변화를 조사하고 분석함으로써 점화코일의 수명을 예측하여 자동차 점화장치의 성능진단과 정보제공을 자동차 전기장치의 발전에 도움이 될 것을 기대하며, 온도상승에 따른 점화코일의 부분방전 특성을 실험하고 분석하였다.

The effect of accelerated weathering(UV) on three type of ethylene propylene diene monomer(EPDM) composite used for higher voltage insulator were investigated by weather-emoter. For weatherability of EPDM composite, surface resistance, dielectric breakdown strength, change of contact angle, surface composition were measured according to UV accelerated weathering time. From the resort of the measurement of surface resistivity, contact angle of EPDM composite decreased and showed chalking and cracking phenomenon when UV weathweing time was for 1500 h and 2000 h. The analysis of surface atomic composition indicated that surface aluminiu(Al) content was detected due to chalking phenomenon after 1500 h of UV weathering, Oxygen content of all composite increased due to the oxidation.

In this paper, it was experimented about thermal and mechanical insulation properties of a elastic epoxy specimen. We made elastic epoxy specimen adding a ratio of 0[phr], 20[phr], 35[phr] and 53[phr] with modifier to existing epoxy. Each specimen was absorbed by 25h, 196h, 361h 484h with water. In water-absorption state, it was experimented a change of heat flows by temperature of elastic epoxy and changes of thermal expansion coefficient. Also, a hardness-change of each specimen was experimented by change of water-absorption time. In this experiment DSC (Differential Scanning Calorimetry) and TMA (Thermomechanical Analysis) were used. A temperature range of DSC was changed from -0[$^{\circ}C$] to 200[$^{\circ}C$], TMA was changed from -0[$^{\circ}C$] to 350[$^{\circ}C$]. In addition, we investigated structural analysis of water absorbed specimen using SEM (Scanning electron microscope).

A magnetic field sensor is fabricated with superconducting ceramics system. The sensor at liquid nitrogen temperature shows the increase in electrical resistance by applying magnetic field. Actually, the voltage drop across the sensor is changed from zero to a value more than $100{\mu}V$ by the applied magnetic field. The change in electrical resistance depends on magnetic field. The sensitivity of this sensor is 2.9 ohm/T. The increase in electrical resistance by the magnetic field is ascribed to a modification of the Josephson junctions due to the penetrating magnetic flux into the superconducting material.

The hysteresis characteristics of flux-lock reactor, which is an essential component of flux-lock type superconducting fault current limiter (SFCL), was investigated. The hysteresis loss of iron core in flux-lock type SFCL does not happen due to its winding's structure especially in the normal state. From the equivalent circuit for the flux-lock type SFCL and the fault current limiting experiments, the hysteresis curves could be drawn. Through the hysteresis curves together with the fault current level due to the inductance ratio for the 1st and 2nd winding, the increase of the number of turns in the 2nd winding of the flux-lock type SFCL had a role to prevent the iron core from saturation.

Superconducting flux flow transistor(SFFT) is based on a control of the Abrikosov vortex flowing along a channel. The induced voltage by moving of the Abrikosov vortex in SFFT is greatly affected by the thickness and width, of channel. In order to fabricate a reproducibility channel in SFFT, we have researched the variation of the critical characteristics of YBCO thin films with the etching time using ICP(Inductively coupled plasma) system. It was certified that the velocity of vortex decreased with increasing the width of channel and was saturated faster in low bias from a simulation. An etching mechanism of YBCO thin films by ICP system was also certified by AFM(Atomic Force Microscope) and by measuring the critical current density with etching time. As measurement result, we could analyze that we should optimize the etching thickness of channel part to construct a flux flow transistor with desired characteristics.

The fine $YBa_2Cu_3O_x$ powder ($0.2{\sim}1.0\;{\mu}m$) is produced by sol-gel method, and electrophoresis deposition is used for the preparation of $YBa_2Cu_3O_x$ thick films which are deposited on Ag wire. The oriented $YBa_2Cu_3O_x$ was tried to be prepared by the zone-melting method under low oxygen partial pressure. The orientation and the phase composition were examined by the X-ray diffraction and the superconductivities were measured by 4 line method. The critical current densities are still quite low, which may be due to unsuitable technical parameters for zone-melting of $YBa_2Cu_3O_x$ thick films. Therefore the heat treatment condition and controlling of low oxygen partial pressure should be improved in the future experiment.

We have studied the interfacial diffusion phenomena and the role of ${\alpha}-Al_2O_3$ buffer layer as a diffusion barrier in the $Ba-ferrite/SiO_2$ magnetic thin films for high-density recording media. In the interface of amorphous Ba-ferrite ($1900-{\AA}-thick)/SiO_2$ thin film during annealing, the interfacial diffusion started to occur at ${\sim}700^{\circ}C$. As the annealing temperature increased up to $800^{\circ}C$, the interfacial diffusion abruptly proceeded resulting in the high interface roughness and the deterioration of the magnetic properties. In order to control the interfacial diffusion at the high temperature, we introduced ${\alpha}-Al_2O_3$ buffer layer ($110-{\AA}-thick$) in the interface of $Ba-ferrite/SiO_2$ thin film. During the annealing of $Ba-ferrite/{\alpha}-Al_2O_3/SiO_2$ thin film even at ${\sim}800^{\circ}C$, the interface was very smooth. The smooth interface of the film was also clearly shown by the cross-sectional FESEM. The magnetic properties, such as saturation magnetization 3nd intrinsic coercivity, were also enhanced, due to the inhibition of interfacial diffusion by the ${\alpha}-Al_2O_3$ buffer layer. Our study suggests that the ${\alpha}-Al_2O_3$ buffer layer act as a useful interfacial diffusion barrier in the $Ba-ferrite/SiO_2$ thin films.

[ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in $Ar/O_2$ atmosphere. SBN30 thin films of different thickness were pre-deposited as a seed layer on $Pt(100)/TiO_2/SiO_2/Si$ substrate followed by SBN60 deposition up to $4500\;{\AA}$ in thickness. As-deposited SBN60/SBN30 layer was heat-treated at different temperatures of 650, 700, 750, and $800\;^{\circ}C$ in air, respectively, The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. There was difference in the crystal structure with heat-treatment temperature, and the electric properties depended on the heating temperature and the seed-layer thickness. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was $15\;{\mu}C/cm^2$, the coercive field (Ec) 65 kV/cm, and the dielectric constant 1492, respectively.

The aim of the study is to scrutinize the relationship between the area of resonance and center frequency with varying thickness by analyzing the characteristics of 2-port resonator. This was done through ideal design using Leach model equivalent model modified Mason model equivalent circuit for the application of bandpass filter high-frequency band with resonator Moreover, through the design of ladder-type BPF, we were able to observe changes in bandwidth, resonation, out-of-band rejection depending on the number and area of resonator.

For the millimeter-wave dielectrics, Forsterite-based ceramics were produced. Pure forsterite ceramics($Mg_2SiO_4$) shows porous micro-structure and very low Q*f values, which is not suitable for the dielectrics for the millimeter-wave band. Several sintering aids including $Al_2O_3$, $Li_2CO_3$, $Li_2SiO_4$, were added to the forsterite ceramics in order to produce dense low-loss dielectrics. Among these additives, $Li_2CO_3$ is the most effective sintering aids. Several sub-components including NiO, ZnO, $SnO_2$, $TiO_2$, were added to enhance the microwave dielectric properties. $TiO_2$ is the most effective additive to enhance the dielectric properties at microwave bands. The simultaneous addition of $TiO_2$ and $Li_2CO_3$ increases Q*f value over 170,000, which can be used as dielectrics in millimeter-wave bands.

Crystal structure of $(Ba_{1-x}La_x)[Mg_{(1+x)/3}Nb_{(2-x)/3}]O_3$ (BLMN) ceramics with $0{\leq}x{\leq}1$ was investigated using synchrotron X-ray powder diffraction (XRD) and high resolution transmission electron microscopy (HRTEM). When La content, x, is above 0.1, the 1:2 ordered hexagonal structure found in $Ba(Mg_{1/3}Nb_{2/3})O_3$ (BMN) was transformed into 1:1 ordered cubic structure. The 1:1 ordered cubic structure was maintained up to x=0.7. However, when x exceeded 0.7, BLMN was transformed 1:1 ordered structure which has cation displacement and in-phase and anti-phase tilt of octahedra.

Nowadays, the study on the ceramic components and modules used in telecommunication system is being performed. Coupler is a microwave passive component used for power coupling or dividing and directional coupler is designed to be possible optional dividing percentage. In our research, We developed 14dB and 19dB directional couplers of EGSM band. The good characteristics, the target insertion loss and high isolation, of couplers is obtained by LTCC processing using a ceramic material.

In this study, an ultrasonic transducer is fabricated with 1-3 type composite resonators. Pulse-echo responses of an ultrasonic transducer are investigated in underwater dependent on the variable designated water-level. LED Output signals of a level limit with changing a water level is obtained by the 1-3 type self-made composite transducer and electric measuring unit. LED is turned on at above the up-limit level with increasing a water level, and LED is turned on at less than the down-limit level with decreasing a water level. There was good agreement between the virtual level and output LED signal by using the self-made water-detecting system.

In this paper, $0.10Pb(Sb_{1/2}Sn_{1/2})O_3-0.25PbTiO_3-0.65PbZrO_3$ ceramics were fabricated by the mixed-oxide method. The sintering temperature and time were $1230^{\circ}C$ and 2[hr], respectively. The structural, dielectric and piezoelectric properties with addition of NiO were studied. The crystal structure of a specimen was rhombohedral. As a result of SEM, the average grain size were decreased with increasing the contents of NiO. But the grains of the specimens doped with 0.4wt% NiO were increased, due to deposits of excess NiO at grain boundaries in the liquid phase. Relative dielectric constant and dielectric loss of the specimen doped with 0.1wt% NiO were 701 and 0.026, respectively.

[ $0.91(PSN-PZT)-0.05BF-0.04PNW+0.3wt%MnO_2+0.6wt%CuO+xwt%CeO_2$ ] ceramics were fabricated with the variations of $CeO_2$ addition at the sintering temperature of $950^{\circ}C$ and their microstructure and dielectric and piezoelectric characteristics were investigated. As the amount of $CeO_2$ addition increased, the grain size, density and electromechanical coupling factor(kp) were increased and the mechanical quality factor(Qm) was decreased. At the $0.3wt%CeO_2$, density, grain size and electromechanical factor(kp) showed the maximum value of $7.87g/cm^3$, $3.22{\mu}m$ and 0.5, respectively. However, mechanical quality factor(Qm) showed the minimum value of 807 at the $0.5wt%CeO_2$.

In this paper, stacked piezoelectric ceramics were used for obtaining a large vibration for a small ultrasonic motor which is useable for the both linear drive and rotational drive. We studied this motor through the finite element analysis method and the simulated driving characteristics were presented. As results, the displacement of the tip of the stator was increased when the layers of the ceramics were increased. Also, by inserting additional aluminum plates between the ceramics and the aluminum bar, the displacement were amplified. In this model, two voltages which have 90 degree phase difference were applied for the bi-directional movement.

The packaging of the integrated circuits requires knowledge of ceramics and metals to accommodate the fabrication of modules that are used to construct subsystems and entire systems from extremely small components. Composite ceramics ($Al_2O_3-SiO_2$) were tested for substrates. A stress analysis was conducted for a linear work-hardening metal cylinder embedded in an infinite ceramic matrix. The bond between the metal and ceramic was established at high temperature and stresses developed during cooling to room temperature. The calculations showed that the stresses depend on the mismatch in thermal expansion, the elastic properties, and the yield strength and work hardening rate of the metal. Experimental measurements of the surface stresses have also been made on a $Cu/Al_2O_3-SiO_2$ ceramic system, using an indentation technique. A comparison revealed that the calculated stresses were appreciably larger than the measured surface stresses, indicating an important difference between the bulk and surface residual stresses. However, it was also shown that porosity in the metal could plastically expand and permit substantial dilatational relaxation of the residual stresses. Conversely it was noted that pore clusters were capable of initiating ductile rupture, by means of a plastic instability, in the presence of appreciable tri-axiality. The role of ceramics for packaging of microelectronics will continue to be extremely challenging.

The lead zirconate titanate, $Pb(Zr_{0:52}Ti_{0:48})O_3$, films of $0.5\;{\mu}m,\;1\;{\mu}m$ and $2\;{\mu}m$ thickness were fabricated on $Pt/Ti/SiO_2/Si$ substrate by the rf magnetron sputtering method. The PZT films were annealed using by a rapid thermal annealing (RTA) method. The thickness dependence of the film structure, dielectric properties, Polarization-electric field hysteresis loops and capacitance-voltage characteristics were investigated over the thickness range of $0.5\;{\mu}m,\;1\;{\mu}m$ and $2\;{\mu}m$. According to the XRD patterns of the films, (110) peak intensity increases with film thickness increased. The increase of PZT films thickness leads to the decrease of the remanent polarization and the dielectric constant.

Nowadays, the study on the ceramic components and modules used in telecommunication system is being performed. Coupler is a microwave passive component used for power coupling or dividing and directional coupler is designed to be possible optional dividing percentage. In our research, We developed 14dB and 19dB directional couplers of DCS band. The good characteristics, the target insertion loss and high isolation, of couplers is obtained by LTCC processing using a ceramic material.

The effects of various sintering additives such as $Bi_2O_3+V_2O_5$, $BiVO_4$, $B_2O_3$, and $CuO+V_2O_5$ on the low-temperature sintering and microwave dielectric properties of $(ZnMg)TiO_3$ system were studied. Sintering was enhanced by the sintering additives and highly dense samples were obtained for $(Zn_{0.8}Mg_{0.2})TiO_3$ at the sintering temperature of $910^{\circ}C$. $(Zn_{0.8}Mg_{0.2})TiO_3$ with 6.19 mol.%$B_2O_3$ was found to show the best sintering and microwave dielectric properties.

The magnetostriction of FeCoGeW/phenol composites is measured under the external magnetic field. A few Measurement are carried out by using the electrical-resistance strain gage, the Wheaton Bridge for eliminating the unnecessary voltage, the lock-in-amplifier for the signal amplification and noise filtering. When the external magnetic field is applied to the longitudinal direction against those samples which is the 10wt.% phenol in composites, the theoretical maximum strain of 120ppm is obtained. According to the larger strain than that of others solid state actuators and piezoelectric actuators. FeCoGeW/phenol composites could be useful as an actuator.

In this paper, $0.10Pb(Sb_{1/2}Sn_{1/2})O_3-0.25PbTiO_3-0.65PbZrO_3$ ceramics were fabricated by the mixed-oxide method. The sintering temperature and time were $1230^{\circ}C$ and 2(hr), respectively. The structural, dielectric and pyroelectric properties with addition of $Y_2O_3$ were studied. The crystal structure of a specimen was rhombohedral. As a result of SEM, the average grain size were decreased with increasing the contents of $Y_2O_3$. Relative dielectric constant and dielectric loss of the specimen doped with 0.2wt% $Y_2O_3$ were 597 and 0.022, respectively. Remanent polarization and coercive field of the specimen doped with 0.4wt% $Y_2O_3$ were $8.5[{\mu}C/cm^2]$ and 10.2[kV/cm], respectively.

Particle size and piezoelectric characteristics of PNW-PMN-PZT ceramics with the variations in attrition milling conditions were investigated for the piezoelectric transformer application. Particle size and distribution were decreased with increasing milling time. Dielectric constant (${\varepsilon}r$), electromechanical coupling factor (kp), mechanical quality factor (Qm) and density showed the optimum value of 1563, 0.53, 2342, 7.63, respectively at 7h milling time.

The present report is the investigation of the effects of the HIP treatment on plasma-sprayed ceramic coating of $Al_2O_3$, $Al_2O_3-SiO_2$ on the metal substrate. These effects were characterized by phase identification, Vickers hardness measurement, and tensile test before and after HIPing.

This paper presents characteristics of piezo transformer for AC-DC converter. This transformer uses transverse vibration mode and the origin of the structure was the ring dot type transformer. Because, the ring dot type transformers produce only step-up phenomenon, we made a multi-layered ring dot structure for a step-down output. The characteristics of the transformer were simulated by using the ANSYS. And frequency and voltage were measured by changing the load resistance and current. Frequencies that have the maximum output voltage and current were gradually increased, when the resistance were increased. Output voltage and current show a stable linearity according to the input voltage. The maximum output power was expected greater than 20 [W]. So, we expect that this type of multi-layered step-down ring dot transformer can be adopted for a small AC adapters.

The varistor properties of the ZPCCT-based ceramics, which are composed of Zn-Pr-Co-Cr-Tb oxides, were investigated with $Tb_4O_7$ content in the range of $0.0{\sim}1.0\;mol%$. As $Tb_4O_7$ content is increased, the ZPCCT-based ceramics exhibited very high densification based on increasing density in the range of $5.73{\sim}5.84\;g/cm^3$. The varitor voltage($V_{1mA}$) and nonlinear exponent($\alpha$) was increased in the range of 280.9 to 751.8 and 29.8 to 44.4 with increasing $Tb_4O_7$ content, respectively. In particular, the maximum $\alpha$ of 44.4 was obtained from 1.0 mol% $Tb_4O_7$ and the, minimum leakage current($I_{\ell}$) of $1.0\;{\mu}A$ was obtained from 0.5 mol% $Tb_4O_7$.

산소 과전압이 낮은 $MnO_2$를 촉매로 사용하여 반도체 산화물계의 산소선택성 전극을 제조하고 산화물 coating층의 미세구조와 전기화학적 특성을 분석하였다. Ti 기판에 열분해 법을 이용하여 $MnO_2$ 피막을 형성하였고, 또한 PVDF : $MnO_2$의 함량비를 1 : 1에서 1 : 40까지 정량적으로 변화시키고 DMF의 함량을 각각의 고정된 PVDF : $MnO_2$의 함량비에서 변화시켜 Pb전극에 1.5 mm/sec의 속도로 5회 dipping하여 $MnO_2$ 피막층을 형성 하였다. $450^{\circ}C$에서 1시간 열분해하여 약 $1\;{\mu}m$의 $MnO_2$ 피막층이 형성되었으나 Ti 기판과의 접착력이 약하여 피막자체에 대한 전기화학적 특성을 관찰할 수 없었다. PVDF : DMF = 4 : 96인 경우 pb 전극의 피막층이 얇기 때문에 박리현상이 일어났으며 이는 산화물 용제의 낮은 점도 때문인 것으로 판단된다. 또한 PVDF : DMF = 10 : 90의 경우는 5회 dipping 하여 약 $150\;{\mu}m$의 피막층을 형성하였다. PVDF : $MnO_2$의 함량비가 1:1에서 1:6 까지는 DMF의 함량에 무관하게 전극 특성이 나타나지 않았지만 $MnO_2$의 양이 상대적으로 증가하면 cycle이 증가하더라도 거의 일정한 전류 값을 갖고 $MnO_2$와 PVDF의 비가 20:1 이상의 조성에서는 균일한 CV 특성을 나타냈다. 이는 $MnO_2$가 효과적으로 촉매 작용을 한 것으로 판단되며 anodic polarization에 의한 산소 발생 과전압도 약 1.4V 정도로 감소되었다.동등한 MSIL 코드를 생성하도록 시스템을 컴파일러 기법을 이용하여 모듈별로 구성하였다.적용하였다.n rate compared with conventional face recognition algorithms. 아니라 실내에서도 발생하고 있었다. 정량한 8개 화합물 각각과 총 휘발성 유기화합물의 스피어만 상관계수는 벤젠을 제외하고는 모두 유의하였다. 이중 톨루엔과 크실렌은 총 휘발성 유기화합물과 좋은 상관성 (톨루엔 0.76, 크실렌, 0.87)을 나타내었다. 이 연구는 톨루엔과 크실렌이 총 휘발성 유기화합물의 좋은 지표를 사용될 있고, 톨루엔, 에틸벤젠, 크실렌 등 많은 휘발성 유기화합물의 발생원은 실외뿐 아니라 실내에도 있음을 나타내고 있다.>10)의 $[^{18}F]F_2$를 얻었다. 결론: $^{18}O(p,n)^{18}F$ 핵반응을 이용하여 친전자성 방사성동위원소 $[^{18}F]F_2$를 생산하였다. 표적 챔버는 알루미늄으로 제작하였으며 본 연구에서 연구된 $[^{18}F]F_2$가스는 친핵성 치환반응으로 방사성동위원소를 도입하기 어려운 다양한 방사성의 약품개발에 유용하게 이용될 수 있을 것이다.었으나 움직임 보정 후 영상을 이용하여 비교한 경우, 결합능 변화가 선조체 영역에서 국한되어 나타나며 그 유의성이 움직임 보정 전에 비하여 낮음을 알 수 있었다. 결론: 뇌활성화 과제 수행시에 동반되는 피험자의 머리 움직임에 의하여 도파민 유리가 과대평가되었으며 이는 이 연구에서 제안한 영상정합을 이용한 움직임 보정기법에 의해서 개선되었다. 답이 없는 문제, 문제 만들기, 일반화가 가능한 문제 등으로 보고, 수학적 창의성 중 특히 확산적 사고에 초점을 맞추어 개방형 문제가 확산적 사고의 요소인 유창성, 독창성, 유연성 등에 각각 어떤 영향을 미치는지 20주의 프로그램을 개발, 진행하여 그 효과를 검증하고자

[ $Bi_{3.25}La_{0.75}Ti_3O_{12}$ ] (BLT) thin films were prepared by using metal organic decomposition method onto the LaNiO3 (LNO) bottom electrode. Both the structure and morphology of the films were analyzed by x-ray diffraction (XRD) and atomic force microscope (AFM). Even at low temperatures ranging from 450 to $650^{\circ}C$, the BLT thin films were successfully deposited on LNO bottom electrode and exhibited (117) orientation. The BLT thin films annealed as low as $600^{\circ}C$ showed excellent ferroelectricity, higher remanent polarization and no significant degradation of switching charge at least up to $5{\times}10^9$ switching cycles at a frequency of 100 kHz and 5 V. For the annealing temperature of $600^{\circ}C$, the remanent polarization $P_r$ and coercive field were $23.5\;{\mu}C/cm^2$ and 120 kV/cm, respectively.

This paper deals with a flat type ultrasonic motor, which uses a longitudinal-bending multi mode vibrator of rectangular form. This ultrasonic motor was designed by combination of the first longitudinal and eighth bending mode, and the motor consisted of a straight aluminum alloy bar bonded with piezoelectric ceramic elements as a driving element. The geometrical dimensions of the rectangular aluminum vibrator were determined by Euler-Bernoulli theory In the experimental device, piezoelectric ceramics ( a piece of ceramic for the L-mode, $24\;{\times}\;8\;{\times}\;1[mm]$, and four pieces for the B-mode, $12.5\;{\times}\;8\;{\times}\;1[mm]$) were attached to one side of a aluminum plate($100\;{\times}\;8\;{\times}\;1[mm]$), and the stator was supported with a plastic case. As results, no-load rpm was 50[rev./m] when applied voltage was 150[Vrms] at the resonance frequency, and as the voltage was increased, the rpm was increased.

In this paper, we investigated SiNx film as a buffer layer of TFT-FRAM. Buffer layers were prepared by two step process of a $N_2$ plasma treatment and subsequent $SiN_x$ deposition. By employing $N_2$ plasma treatment, interface traps such as mobile charges and injected charges were removed, hysteresis of current-voltage curve disappeared. After $N_2$ plasma treatment, a leakage current was decreased about 2 orders. From these results, it is possible to perform the plasma treating process to make a good quality buffer layer of MFIS-FET or capacitor as an application of non-volatile memory.

[ $(Ba_{0.93}Ca_{0.07})_{1.009}(Ti_{0.82}Zr_{0.18})O_{2.}$ ] 이고 첨가제로 $MnO_2$ 0.2wt%, $Y_2O_3$ 0.18wt%, $SiO_2$ 0.15wt% 유리프릿으로 $(Ba_{0.4}Ca_{0.6})SiO_3$ 1 wt%를 첨가한 조성을 이용하여 각 공정별 최적화를 통해 고 신뢰성이면서 고용량 MLCC를 제작하였다 고 신뢰성 MLCC 제작에서 있어 최적의 소성온도를 확인 할 수 있었으며 외부 전극을 통한 도금액 침투를 방지하여 절연저항 특성을 향상할 수 있음을 확인하였다. 또한 1608 크기의 1.13uF의 용량을 가지는 고 신뢰성 MLCC를 제작하였다.

The humidity sensors with a stable characteristics and gas sensors operating at room temperature have been fabricated, and a multi-functional sensor system which has gas sensor, humidity sensor, temperature sensor and control circuit has been applied to the microwave oven system. For a suitable cooking state, the humidity sensors was more applicable to heating and defrosting condition than gas sensors, however, the dynamic characteristics of gas sensors were obtained in the easy burning food such as pop corn.

MCA deflection control is a important technology for the development of MEMS applications. In this study, deflection analysis at the MLA/Si diaphragm was investigated by Finite Element Method. Analysis of Si diaphragm combined with MCA has been implemented into the ANSYS (Solid5 and Solid45). On the basis of this structure, deflection versus MCA number of layers has been modelled and MCA/Si contact area characteristics with different diaphragm conditions were analyzed. Consequently, it is expected that fabrication technology of MCA/Si diaphragm could be usefully applied for the fabrication process of high-performance piezoelectric MEMS devices.

In this paper, a novel processing technique for fabrication of high-temperature MEMS based on polymer-derived SiCN microstructures is described. PDMS molds are fabricated on SU-8 photoresist using standard UV-photolithographic processes. Liquid precursors are injected into the PDMS mold. And then, the resulting solid polymer structures are crosslinked under isostatic pressure, and pyrolyzed to form a ceramic capable of withstanding over $1500^{\circ}C$. These fabricated SiCN structures would be applied for high-temperature applications, such as heat exchanger and combustion chamber.

The purpose of this study is to develope prototype EPID system and improve image quality of radiation therapy field imaging system using CCD camera. For this research we used Linac(Clinac 4/100), Copper metal plate, $Gd_2O_2S_2$ phosphor and CCD camera(Photronic). In this study we find best thickness of buil-up metal plate and acquired projection image of humanoid head phantom. Also we enhanced raw image data using superposition and histogram stretching method. Through the thickness optimized of metal plate and image processing, we confirmed of an improved image quality of an EPID system using CCD camera. As result, highest quality image was acquired at 1mm thickness of Copper metal plate and improved image quality by image processing methods.

In this paper, the evaluation of image quality was performed for digital radiography which is developing in using amorphous selenium as a photoconductor material for the purpose of offering basic research data and measurement technique about Medical Imaging Quality. So Modulation Transfer Function as a main factor of imaging quality evaluation was investigated by slit method. For measurement of MTF, Nuclear associates. 07-624 Slit camera image was obtained to study the variation of MTF corresponding to changing spatial frequency. And Presampling MTF was estimated by slit camera image with $10\;{\mu}m$ width at Digital Radiography. In this study, the obtained data demonstrates that the clinical value of a direct conversion type digital radiation detector using the amorphous selenium, which is being developed by domestic technology.

The properties of these detectors can be controlled by electronics and exposure conditions. Flat-panel detectors for digital diagnostic imaging convert incident x-ray images to charge images. Flat panel detectors gain more interest real time medical x-ray imaging. Active area of flat panel detector is $14{\times}17$ inch. Detector is based on a $2560{\times}3072$ away of photoconductor and TFT pixels. X-ray conversion layer is deposited upper TFT array flat panel with a 500m by thermal deposition technology. Thickness uniformity of this layer is made of thickness control technology(5%) of thermal deposition system. Each $139m{\times}139m$ pixel is made of thin film transistor technology, a storage capacitor and charge collection electrode having geometrical fill factor of 86%. Using the separate driving system of two dimensional mosaic modules for large area, that is able to 4.2 second per frame. Imaging performance is suited for digital radiography imaging substitute by conventional radiography film system..

For the purpose of digital x-ray imaging, many materials such as $PbI_2$, $HgI_2$, TlBr, CdTe and CdZnTe have been under development for servaral years as direct converter layer. $Hgl_2$ film detector have recently been shown as one of the most promising semiconductor materials to be used as direct converters in x-ray digital radiography. This paper, the $HgI_2$ films are deposited on conductive-coated glass by screen printing, in which $HgI_2$ powder is embedded in a binder and solvent, and the slurry is used to coat the conductive-coated glass. We investigated electrical characteristic of the fabricated $HgI_2$ films. The x-ray response to radiological x-ray generator of 70Kvp using the current integration mode will be reported for screen printing films. These results indicate that $HgI_2$ detectors have high potential as new digital x-ray imaging devices for radiography.

In this paper, the purpose is to develop imaging technique of synchrotron radiation using CMOS image sensor. The detector using hybrid method to be research in this lab was used, in order to increase image signal. We made experiments with 1B2 Whitebeam/microprobe beamline in PAL (Pohang Accelerator Laboratory). Phosphor materials such as ZnS:(Ag,Li), ZnS:(Cu,Al), $Y_2O_2S:Eu$ were produced by spin coating on glass. Synchrotron radiation images were acquired and evaluated from monochromatic light from monochromoator in PAL 1B2line. From obtained object and phantom, MTF was 0.15 in ZnS:(Ag,Li) phosphor, and 0.178 in ZnS:( Cu,Al) at 151p/mm. MTFs were unsystematic because thickness of phosphor and uniformity of surface were not optimized. It's expected to improve MTF and the qualify of images as uniformity's optimized.

Recently, the study on development of electrical and electronic device is done to get miniature, high degrees of integration and efficiency by using inorganic materials. the study of Langmuir-Boldgett(LB) method that uses organic materials because of the limitation for the ultra small size. In this paper, detected displacement current using PBLG and PBDG, deposition and observed the electrical characteristics to each 1, 3, 5, 7, 9 layers by LB method. Maximum value of change ratio of displacement current by the detected speed and temperature appeared almost lineally, could confirm that it are in comparison relation each other speed temperature and displacement current. The structure of manufactured device is MIM. Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V]. The insulation property of a thin film is better as the distance between electrodes is larger.

Monolayers of lipids on a water surface have attracted much interest as models of biological membranes, but also as precursors of multilayer systems promising many technical applications. Until now, many methodologies have been developed in order to gain a better understand. Photoisomerization in monolayers of a novel azobenzene compound, azobenzene dendrimer, was investigated for the first time by means of the absorption spectrum and Maxwell displacement current (MDC) technique. Dendrimers are well-defined macromolecules exhibiting a tree-like structure, first derived by the cascade molecule approach. According to the absorption spectrum, trans-to-cis conversion ratio was estimated to the third generation of azobenzene dendrimer deposited onto a glass substrate. Temperature-dependent induced charge with trans-cis isomerization was also measured by means of MDC technique.

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The influence of the substrate temperature, working gas pressure, discharge power and doping amounts of Al on the electrical, optical and morphological properties were investigated experimentally. The effect of bias voltage on the electrical properties of ZnO thin film were also studied. Films with lowest resistivity of $5.4{\times}10^{-4}\;{\Omega}-cm$ have been achieved in case of films deposited at 1mtorr, $400^{\circ}C$ with a substrate bias of +10V for 840nm in film thickness.

This paper is about research of scintillator layer, which is used for Hybrid method to increase electric signals in a-Se, the material of Direct method. In case of the thermal evaporation, CsI has column structure which is an disadvantage as scintillator. But it decreases scattering of incident X-ray, has better Light output intensity than other scintillation materials. CsI was made by Thermal evaporation. The Doping material, Na, 0.1, 0.3, 0.5, 0.7g were added in each sample. Analysis of absorbed wavelength, PL(Photoluminescence), Light output intensity, SEM, and XRD analysis were performed to analyze optical characteristics. Doping rate of CsI:Na to use as scintillation layer in a-Se based detector could be optimized.

CsI 형광체는 X선에 대한 분해능 및 변환효율이 우수한 물질이다. 최근 대면적 평판형 X선 영상검출기의 변환층으로 이용하기 위해 CsI 형광체의 대면적 제조에 대한 연구가 활발히 진행되고 있다. 본 논문은 진공 열증착법을 이용하여 증착속도(3, 3.8, $4.5\;{\mu}m/min$)에 따라 $20\;{\mu}m$ 두께의 CsI 필름을 제조하였고, XRD 및 SEM 분석을 통해 CsI 필름의 기하학적 구조를 조사하였다. 증착된 CsI 필름은 증착속도에 관계없이 복잡한 다결정 구조를 가지며, $3\;{\mu}m/min$의 증착속도에서 약 $1\;{\mu}m$ 크기로 needle-like 한 columnar structure를 가졌다. As results, about 3um/min evaporation rate formed as good geometry characteristics CsI layer.

Today, much terminologies such as noise spectrum, Sharpness, contrast, MTF had been defined for Image quality revaluation of radiation Image. Since development of Xeroradiography In the 1970s, Digital radiation detector that use amorphous selenium was developed. The aim of this research is to analyze physical phenomenon of digital radiation detector that use amorphous selenium. Result of Monte Carlo simulations on amorphous selenium based on physical properties(creation of electron-hole pairs) by induced x-ray are described. From the simulation, intrinsic point spread function(PSF) was found and used to observe modulation transfer function(MTF). We investigated how PSF and MTF changed with various x-ray energy. This result can be used to design digital x-ray detector based on a-Se.

Cu thin films of $6000{\AA}$ thickness were deposited by Electron Beam Evaporation(EBE) method on the glass. The resistivity properties and adhesion of Cu thin films were investigated by various annealing and substrate temperature. Cu thin films were annealed in the air and vacuum condition for 10 min after the deposition. The resistivity and adhesion(the force required to separate films from substrates) was measured by 4-point probe and scratch testing. The resistivity of non-annealing Cu thin films was distinguished more substrate temperature loot than substrate temperature R.T, $200^{\circ}C$. In the case of air condition annealing, as heating temperature was increased, the resistivity was decreased. In the case of vacuum condition annealing, the resistivity was increased at heating temperature $200^{\circ}C$. The best resistivity($1.72\;{\mu}{\Omega}{\cdot}cm$) of Cu thin films was obtained by the air condition heating temperature $200^{\circ}C$ at the substrate heating temperature $100^{\circ}C$. As a result of scratch testing, adhesion was increased by annealing. And maximum adhesion had 600 gf.

The properties of digital X-ray detectors depend on the absorption extent of X-rays, the generated signal of each X-ray photon and the distribution of the generated signal between pixels. In digital X-ray detector with single layer, signal is generated by X-ray photon captured in photoconductor. In X-ray detector with multi structure that scintillator formed above the top of photoconductor, signal is generated both by X-ray photon captured each in scintillator and photoconductor. X-ray detector with multi structure is generated more signal than single layer detector. In this paper, we simulated absorption fraction of X-ray detector with multi-layer using Monte Carlo program. The results compared with single-layer detector to be formed scinillator or photoconductor.

In this paper, We introduced that the method for deforming the dielectric relaxation time $\tau$ of floating monolayers on water interface. Displacement current flowing across monolayer is analyzed using a rod-like molecular model. It is revealed that the dielectric relaxation time $\tau$ of monolayers in the isotropic polar orientational phase is determined using a linear relashionship between the monolayer compression speed a and the molecular area $A_m$. A displacement current gives a peak at A=$A_m$. The dielectric relaxation time $\tau$ of phospolipid monolayers was examined on the basis of the analysis developed here.

The effects of oxygen partial pressure and vacuum annealing on the electrical properties of sputtered vanadium oxide($VO_x$) thin films were investigated. The thin films were prepared by r.f. magnetron sputtering from $V_2O_5$ target in a gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio of 0% and 8% is adopted. Electrical properties of films sputter-deposited under different oxygen gas pressures and in situ annealed in vacuum at $400^{\circ}C$ for 1h and 4h are characterized through electrical conductivity measurements. I-V characteristics were distinguished between linear and nonlinear region. In the low field region the conduction is due to Schottky emission, while at high fields it changes to Fowler-Nordheim tunneling type conduction. The conductivity measurements have shown an Arrhenius dependence of the conductivity on the temperature.

The test method of ASTM E 756 and JIS G 0602 to estimate vibration-damping properties is presented. Measurement method depending on specimen support, exciting method and calculation method for loss factor is used. Half-power bandwidth method and vibration decay method is used in the calculation method for loss factor, and Young's modulus is decided by geometric character and density for specimen and resonance frequency. Vibration measurement sensor is compared by using non-contact displacement detector, velocity detector and accelerometer. The cause of measurement error is also presented.

A 2-Dimensional SSIMT(Suppressed Sidewall Injection Magnetotransistor) sensor with high linearity is presented in this paper. The prototype is fabricated by using the Hynix $0.6{\mu}m$ CMOS Process. The fabricated SSIMT shows that the variation of each collectors current are extremely linear by varing the magnetic induction from -200mT to 200mT at $I_B\;:\;1000{\mu}A,\;V_{CE}\;=\;5V\;and\;V_{SUB}\;=\;5V$. The relative sensitivity is up to 13%/T. At B = 0, magnetic offset is about 40mT, there relative sensitivity is 4.72%/T. The nonlinearity of the fabricated 2-D SSIMT is measured about 1.2%.

In this paper, new luminescent material, 6,11-dihydoxy-5,12-naphtacene-dione Alq3 complex (Alq2-Ncd), 1,4-dihydoxy-5,8-naphtaquinone Alq3 complex(Alq2-Nq) was synthesized. And extended efforts had been made to obtain high-performance electroluminescent(EL) devices, since the first report of organic light-emitting diodes(OLEDS) based on tris-(8-hydroxyquinoline) aluminum(Alq3). We have performed investigate characterization of the materials. Current-voltage characteristics, luminance-voltage characteristics and luminous efficiency were measured by Flat Panel Display Analysis System(Model 200-AT) at room temperature. An intensive research is going on to improve the device efficiency using the hole injection layer, different electrodes, and etc. By using the hole injection layer, the charge-injection can be controlled and the stability could be improved. This study indicates not only the sterical effect but also some other effects would be responsible for the change of the emission wavelength.

최근 LCD제품은 고유한 특장인 경박단소가 요구되면서, 기존의 Back Light Unit(BLU) 로는 대응할 수 없는 사양으로 진화되고 있다. 기존과 동일한 설계개념으로 접근시에 시장에서 요구되는 중량, 두께, 휘도의 사양을 만족시킬 수 없으며, BLU의 주요광원인 CCFL(Cold Cathod Fluorescent Lamp)의 휘도 개선 또 한 한계에 다다르고 있다. 따라서 앞으로의 BLU 의 고성능화는 최적화, 고효율화로의 개발 전개가 예상되며, LCD의 고해상도에 따른 투과율 저하를 보상하기 위한 고품질 BLU의 개발이 시급한 상황이다. 본 연구에서는 이러한 BLU의 고효율화, 고품질화를 달성하기 위한 고성능 도광판 개발과 관련하여, 실물 제작에 앞서 광학시뮬레이션을 통한 이론적 접근을 수행하였다. 연구 결과, 상측에서 정각 $90^{\circ}$ 에 높이 $50{\mu}m$ 하측에서 정각 $80^{\circ}$ 높이 $28{\mu}m$일때 평균조도가 71.52W/m^2 구현됨을 알 수 있다. 이 결과를 바탕으로 통상의 인쇄 방식 도광판에 비해서 약 20% 정도의 휘도향상이 가능함을 알 수 있었다. 또한 차후 본 결과를 바탕으로 한 실물 제작을 통해 설계 시뮬레이션 결과와의 비교를 통해서 정확한 예측이 가능한 시스템을 구현함을 목적으로 하였다.

In this thesis, We observed the characteristic of the diffraction efficiency according to the wave length of the chalcogenide thin films. The used an $Ag(200{\AA})/As_{40}Ge_{10}Se_{15}S_{35}$ thin film. We made grating formation by each wave length 325nm, 442nm, 632.8nm. After measure diffraction efficiency of the time. We expressed the maxium saturation value at fast time as were the short wavelength and stable characteristic. On the other hand we appeard to the by a maxium diffraction efficiency the 1.7% in 325nm, 0.8% in 442nm, 0.27% in 632.8nm. The maximum diffraction efficiency expressed high value as were the long wavelength.

We report the microwave reflection coefficient $S_{11}$ of copper(II)-phthalocyanine(CuPc) using a near-field microwave microscope(NSMM) in order to understand the intrinsic electromagnetic properties of organic materials. For a NSMM system, a high-quility microstip resonator coupled with a dielectric resonator was used. The reflection coefficient $S_{11}$ was changed by the preparation conditions of CuPc thin films. We compared the reflection coefficient with crystal phase, surface morphology, UV absorption spectra and x-ray diffraction results.

Complex impedances with frequency and voltage variation were analyzed in $ITO/Alq_3(60nm)/Al$ device structure. At low frequency, complex impedance is mostly expressed by resistive component, and at the high frequency by resistance and capacitive component. We have also evaluated resistance, capacitance and permittivity.

The nematic liquid crystal (NLC) aligning capabilities using a-C:H thin film deposited at the three kinds of rf bias condition were investigated. A high pretilt angle of about $11^{\circ}$ by the ion beam alignment method was observed on the a-C:H thin film (polymer-like carbon) deposited at 1W rf bias condition, and the low pretilt angle of the NLC was observed on the a-C:H thin film(diamond-like carbon) deposited at rf 30W and 60W bias condition. Consequently, the high NLC pretilt angle and the good aligning capabilities of LC alignment by the IB alignment method on the a-C:H thin film deposited at 1W rf bisa condition can be achieved.

This paper shows necessity of encapsulation layer to maximite flexibility of brittle indium-tin-oxide (ITO) on polymer substrates. And, Young's modulus (E) of encapsulation layer have an significant effect on external bending stress and the coefficient of thermal expansion (CTE) of that have a significant effect on internal thermal stress. To compare magnitude of total mechanical stress including both bending stress and thermal stress, the mechanical stress of triple-layer structure (substrate / ITO / encapsulation layer or substrate / buffer layer / ITO) can be quantified and numerically analyzed through the farthest cracked island position. As a result, it should be noted that multi-layer structures with more elastic encapsulation material have small mechanical stress compared to that of buffer and encapsulation structure of large Young's modulus material when they were externally bent.

We investigated the electro-optical (EO) performances of the super twisted nematic liquid crystal display (STN-LCD) on the polyimide (PI) surface using polymer film. Monodomain alignment of the plastic STN-LCD can be observed. A stable voltage-transmittance (V-T) curve of the plastic STN-LCD was observed on the polyimide (PI) surfaces using polymer film. Also, a faster response time for the plastic STN-LCD on the polyimide (PI) surfaces using polymer film can be achieved. However, the transmittance of the plastic STN-LCD on the polyimide (PI) surfaces using polymer film decreased greatly as cell gap decreases.

To diffuse Zn at solid-state, the $SiO_2/ZnO/SiO_2$ wafers was made by PECVD and RF Spotter. Thicknesses of bottom $SiO_2$ and cap $SiO_2$ was about $500{\AA}$ and about $3500{\AA}$. First test was Diffusion temperatures were $760^{\circ}C$, $780^{\circ}C$, and $800^{\circ}C$, and diffusion times were 1, 2, 3, 4, 5, and 6 hr and 2nd test was Diffusion temperatures were $760^{\circ}C$, $720^{\circ}C$, and $680^{\circ}C$, and diffusion times were 1, 2, 3, 4, 5, and 6 hr. LED chips were fabricated by the diffused wafers at Fab. The peak wavelength of all chips showed about $625{\sim}650\;nm$ and red color Main reason for Iv change was by diffusion temperature not diffusion time. The lower temperature was the higher Iv. We thick that these properties is because of the very high diffusion temperature.

Red organic electroluminescent(EL) devices based on poly(N-vinylcarbazole)(PVK) and tris(8-hydroxyquinorine aluminum)($Alq_3$) doped with red emissive material, 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)4H-pyran(DCJTB), poly(3-hexylthiophene)(P3HT), Rubrene and 4-dicyanomethylene-2-methyl-6[2-(2,3,6,7-tetrahydro-1H,5H-benzo-[i.j])quinolizin-8yl)vinyl-4H-pyran(DCM2) were fabricated. We examine the energy transfer from $Alq_3$ to DCJTB, P3HT, Rubrene and DCM2 by comparing between the PL and EL spectrum. The maximum peak PL intensities were achieved when the doping concentration of DCJTB, DCM2, P3HT and Rubrene has 5, 1, 0.5, 2wt%, respectively. The maximum luminance of device using DCJTB showed $594\;cd/m^2$ at 15V.

We have carried out two-beam interference experiment to form holographic grating on amorphous $As_{40}Ge_{10}Se_{15}S_{35}/Ag$ double-layer. In this study holographic grating formed using He-Ne laser(632.8nm) under non-polarization state and p-polarization state and we confirm that the diffraction efficiency depend on thickness of Ag. The diffraction efficiency was obtained by first order intensity. We got the maximum diffraction efficiency that thickness of Ag was $600{\AA}$. The maximum diffraction efficiency was 13.5% in (P:P) polarization state.

We report the dark spots in organic light emitting diodes by using a near-field scanning microwave microscope. Devices structure was glass / indium-tin-oxide(ITO) / copper-pthalocyiane(Cu-Pc) / tris-(8-hydroquinoline)aluminum(Alq3) / aluminum(Al). We made artificial dark spots by using a etching technique on a ITO substrate. Near-field scanning microwave microscope images and reflective coefficient of dark spots were measured and compared by the change of various applied voltage changes 0-15V.

We investigated response characteristics of twisted nematic (TN) cell with different nematic liquid crystals (NLCs) and cell gap d on a rubbed polyimide (PI) surface. High transmittance and fast response time of the TN cell on the rubbed PI surface were achieved by using high birefringence (${\Delta}n$) and low cell gap d. The transmittance and response time of the TN cell on the rubbed PI surface decreased with decreasing ${\Delta}nd$. The fast response time of TN cell using high birefringence with ${\Delta}nd=0.363$ on the rubbed PI surface was measured 5.1 ms.

We synthesized high thermal photoalignment material with hydroxyl aromatic polyimide, and studied the liquid crystal (LC) aligning capabilities on the photopolymer layers. Also, electro-optical (EO) performances for the twisted-nematic (TN)-liquid crystal display (LCD) photoaligned with linearly polarized UV exposure were investigated. A good LC alignment with UV exposure on the photopolymer surface can be obtained. However, the low pretilt angles were obtained below $1^{\circ}$. The Voltage-transmittance (V-T) curve without backflow bounce in the photoaligned TN cell with UV exposure was observed. The response time of photoaligned TN cell was measured about 24 ms.

The liquid crystal (LC) aligning capabilities by the washing processes after rubbing on the two kinds of the rubbed polyimide (PI) surface were studied. The polar anchoring energy of 4-n-pentyl-4'-cyanobiphenyl (5CB) increased with the rubbing strength RS on the two kinds of the rubbed PI surface. The polar anchoring energy of 5CB on the rubbed PI surface with alkyl side chains is larger than the rubbed PI surface with CONH moiety. Also, the surface ordering of 5CB on the rubbed PI surface with alkyl side chains is larger than the rubbed PI surface with CONH moiety. Therefore, the surface ordering of 5CB strongly depends on the polymers and washing process.

Our Zn diffusion into n-type $GaAs_{0.40}P_{0.60}$ used ampoule-tube method to increase IV. N-type epitaxial wafers were preferred by $H_2SO_4$-based pre-treatment. $SiO_2$ thin film was deposited by PECVD for some wafers. Diffusion times and diffusion temperatures respectability are 1, 2, 3 hr and 775, $805^{\circ}C$. LED chips were fabricated by the diffused wafers at Fab. The peak wavelength of all chips showed about $625{\sim}650\;nm$ and red color. The highest IV is about 270 mcd at the diffusion condition of $775^{\circ}C$, 3h for the wafers which didn't deposit $SiO_2$ thin films. Also, the longer diffusion time is the higher IV for the wafers which deposit $SiO_2$ thin films.

We have fabricated an air stable blue emitting organic electroluminescent devices (OLEDs) with a carbazole based emitting molecule, Bis(3-N-ethylcarbazolyl)terephthalidene (BECP). Our device emits strong blue at 472 nm with the luminance efficiency of near 1 lm/W at a voltage and current density of 8 V and 5.7 mA/cm2, respectively, reaching the brightness up to 5000 cd/m2 at 270 mA/cm2. Finally, in order to tune the emission color from blue to green, we have used Bis(3-N-ethylcarbazolyl)cynoterephthalidene (BECCP), a derivative of BECP by adding cyno group in side chain, and compared the electroluminscence (EL) of OLEDS prepared by BECCP to that of BECP based OLEDs.

The purpose of this paper is to investigate the effect of arc current and contact velocity on the erosion of silver contact to be used in low voltage circuit breakers. The arc current range from $2kA_{rms}$ to $20kA_{rms}$. A test system allows the control of the opening velocity profiles with contact velocities up to 10m/s and also enables the synchronization of the contact opening with a point on the arc current waveform. Contact erosion is evaluated by measuring the mass change of the cathode and anode. The results show that increase the opening velocity from 2m/s to 6m/s leads to an decrease in the contact erosion. The material transfer from one electrode to another is shown to depend on the transfer charge and the opening velocity of the contacts.

In recent, there have been several developments in lamp technology that promise savings in electrical power consumption and improved quality of the lighting space. Above all, the advantage of ring-shaped electrodeless fluorescent lamp is the removal of internal electrodes and heating filaments that are a light-limiting factor of conventional fluorescent lamps. The ring-shaped electrodeless lamp is intended as a high efficacy replacement for the incandescent reflector lamp in many applications. Therefore, the life time of ring-shaped electrodeless fluorescent lamps is substantially higher than that of conventional fluorescent lamps and last up to 60,000 hours. In this paper, maxwell 3D finite element analysis program (Ansoft) was used to obtain electromagnetic properties associated with the coil and nearby structures. The electromagnetic emitting properties were presented by 3D simulation software operated at 250kHz and some specific conditions.

유도결합형 플라즈마를 이용하는 무전극 형광램프는 소프트 페라이트를 이용하여 방전을 유도하며, 페라이트의 주파수나 온도 특성이 안정하면, 공심 솔레노이드코일을 사용하였을 때보다 램프저력이 더 효율적이 된다. 페라이트의 형상과 코일의 권선수는 코일의 임피던스, 인덕턴스, Q-factor에 직접적으로 영향을 주며, 감은 위치에 변화에 의해서도 그 값들이 변할 수 있다. 본 논문에서는 전구형 무전극 형광램프의 방전에 중요한 역할을 하는 안테나에 대한 실험 결과로서 Mn-Zn 페라이트를 이용한 솔레노이드 코일에 주파수와 코일의 권선수를 변화시켜 코일의 전기적 특성을 조사하였다. 임피던스 특성은 주파수가 증가함에 따라 증가하였으며, 코일의 권선수가 14회일 때, 기존 램프의 안테나와 비슷한 324[$\Omega$]을 나타내었으나, Q-factor는 코일의 권선수가 증가할 수 록 감소하였으며, 기존 램프의 안테나와 많은 차이를 나타내었다.

In this paper, the discharge characteristics of silent discharge chamber with 2mm and 3mm gap spacings were investigated. Dielectric of $Al_2O_3$ was embedded in the cylindrical type of discharge chamber. It was known that V-I and P-V characteristics depend strongly on the charge transportation characteristics, and in the low frequency silent discharge mode of operation, discharge voltage was always sustained to Vd, irrespective of applied voltage.

It has been shown that ion implantation produces remarkable improvements in surface-sensitive physical and chemical properties as well as other mechanical properties, in polymers. In this study, ion implantation was performed onto polymer, PC(polycarbonate), in order to investigate surface hydrophilic property through contact angle measurement using distilled water. PC was irradiated with N, Ar, Xe ions at the irradiation energy of $20\;{\sim}\;50keV$ and the dose range of $5{\times}10^{15},\;1{\times}10^{16},\;7{\times}10^{16}\;ions/cm^2$. The contact angle of water has been reduced with increasing fluence and ion mass but increased with increasing implanted energy. The changes of chemical and structural property are discussed in view of infrared spectroscopy and FT-IR, XPS, which shows increasing C-O bonding and C-C bonding. The root mean square of surface roughness examined by means of AFM changed smoothly from 0.387nm to 0.207nm and the change of wettability was discussed with respect to elastic and inelastic collisions obtained as results of TRIM simulation. It was found that wettability of the modified PC surface was affected on change of functional group and nuclear stopping or linear energy transfer(LET, energy deposited per unit track length per ion) that causes chain scission by displacing atom from polymer chains, but was not greatly dependant on surface morphology.

Recently, the polymer insulators which are being used for high voltage applications have some advantages such as light weight, small size, vandalism resistance, hydrophobicity and easy making process. During outdoor service of polymer insulators, the surface of the insulating material is frequently subjected to moisture and contamination which lead to the well known phenomenon of dry band arcing. Their tracking resistance, erosion resistance, end sealing and shed design are very important because dry band arcing causes degradation of polymer surface. The shape design of porcelain insulator is formalized but design standard for polymer insulator is no standardized up to now, much research is necessary in real condition. In this paper, the aging property of polymer insulator with shed shape(regular, alternative type) is analyzed through numerical analysis, CEA(canadian electricity association) tracking wheel test and IEC 61109 Annex C.

무전극 램프에서 유도 결합형 플라즈마가 많이 사용되는데 코일의 권선수나 주파수에 의해 전기적 특성의 변화가 크다. 따라서, 기존의 환형 무전극 형광 램프에 사용되는 ferrite core나 coil을 새롭게 적용하기 위하여 투자율이 2000인 Mn-Zn ferrite를 사용하여 주파수별로 coil의 권선수를 변화시키며 전기적 특성을 측정하여 기존의 환형 무전극 형광램프와 비교하였다.

This paper was shown removal characteristic of escherichia coli for discharge tube with globular $SiO_2$. At the result of the removal characteristic experiments of escherichia coli using the discharge tube with globular $SiO_2$, because the electric field is also increased when input voltage is increased, the removal characteristic of escherichia coli was appeared relation connection to input voltage. If a passing number of test water in discharge tube is increased, the removal ratio of escherichia coli is increased because passing number of electric field section is increased. When diameter of globular $SiO_2$ is increased, the removal time of escherichia coli is to be decreased because dielectric polalization of globular dielectric($SiO_2$), Also, the removal ratio of escherichia coli of the discharge tube with globular dielectric($SiO_2$) is appeared higher than the removal ratio of the discharge tube without globular dielectric($SiO_2$).

This paper was shown water properly conversion and removal characteristic of escherichia coli for discharge tube with $ZrO_2$ beads. At the result of the removal characteristic experiments of escherichia coli using the discharge tube with $ZrO_2$ beads, because the electric field is also increased when input voltage is increased, the removal characteristic of escherichia coli was appeared relation connection to input voltage. And if a passing number of test water in discharge tube with $ZrO_2$ beads is increased, the removal ratio of escherichia coli is to be increased because passing number of electric field section is increased. And if diameter of $ZrO_2$ beads is increased, the removal time of escherichia coli is to be decreased because dielectric polalization of $ZrO_2$ beads. Also, the removal ratio of escherichia coli of the discharge tube with $ZrO_2$ beads. is appeared higher than the removal ratio of the discharge tube without $ZrO_2$ beads. And a salutation point of ozone and $H_2O_2$ generation density inner water was appeared near 60[min].

This paper describes the information for quantitative simulation of weakly ionized plasma. We should grasp the meaning of the plasma state condition to utilize engineering application and to understand materials of plasma state. In this paper, electron swarm parameter in He+Xe and Ar+He mixture gas calculated for range E/N values $0.01{\sim}500$ [Td] at the temperature is 300 [K] and pressure is 1 [Torr], using a set of electron collision cross sections determined by the authors, and using a method of Backward Prolongation by two term approximation Boltzmann equation method, for basic study on the gas discharge panel.

In this paper, neural networks is studied to apply as a PD source classification in XLPE power cable specimen. For treeing discharge sources in the specimen, three defected models are made. And these data making use of a computer-aided discharge analyser, statistical and other discharge parameters is calculated to discrimination between different models of discharge sources. And also these parameter is applied to classify PD sources by neural networks. Neural Networks has good recognition rate for three PD sources.

The conventional testing as IEC-60587 is widely used in suface aging measurement of outside insulator those testing can carry out very short time in Lab testing. Also IEC-60587 testing is able to offer the standard judgement of relative degradation level of out side HV machine. Therefore it is very useful method compare to previous conventional tracking testing method and effective Lab testing method, But surface discharges(SD) have very complex characteristics of discharge pattern so it is required estimation research to development of precise analysis method. In recent, the study of IRR Camera is carrying out discover of temperature of power equipment through condition diagnosis and system development of degradation diagnosis.

Fractal mathematics is being highlighted as a research method for classification of image. But the application of Fractal dimension(FD) has been required the complicated calculation method because of its complex repetition progressing. In this paper, it has been developed the new approach method to express the Fractal Dimension(FD) for aging level calculation and estimation system of outside insulator using special image processing algorithm. As a result after FD testing, the recognized aging estimation of FD has a very characteristics compared to the conventional visual inspection.

The thin films fabricated by using the layer-by-layer sputtering was compared with the thin film fabricated by using the evaporation method. Re-evaporation in the form of Bi atoms or $Bi_2O_3$ molecules easily bring out the deficiency of Bi atoms in thin film due to the long sputtering time of the layer-by-layer deposition. On the other hand, the respective atom numbers corresponding to BiSrCaCuO phase is concurrently supplied on the film surface in the evaporation deposition process and leads to BiSrCaCuO phase formation. Also, it is cofirmed that by optimizing the deposition condition, each single phase of the Bi2201 phase and the Bi2212 phase can be fabricated, the sticking coefficient of Bi element is clearly related to the changing of substrate temperature and the formation of the Bi2212 phase.

Recently, because GIS equipment has problems on confidence according to long-time usage, development of diagnosis technique has been importantly recognized. Therefore. measurement and analysis of PD has been generally used much equipment of GIS. But, in case of measurement of PD at field, real trouble signals are difficult to classify noise. Accordingly, a variety of trouble conditions for DS were simulated, and detected signals were analyzed by the application of electrical and mechanical methods. For this analysis, detected signals were accumulated according to phase-magnitude with the application of Induction sensor, and then we analyzed the characteristics. For the simulation experiment, we made DS for 170kV GIS and analyzed the characteristics of detected singals with the application of neural network algorithm.

Ozone is usually generated from oxygen gas using a silent discharge apparatus and its concentration is less then 10 mol%. Ozone is condensed by the adsorption method, which is widely used for the growth of oxidation thin films such as superconductor. Highly condensed ozone is analyzed by three methods; ultraviolet absorption, thermal decomposition and Q-mass analyzing methods. Thermal decomposition method is most effective in the highly condensed ozone region and its method is superior to Q-mass analyzer for determining ozone concentration because of the simplicity of the method.

BiSrCaCuO superconducting thin films have been fabricated by co-deposition using the faraday cup. Despite setting the composition of thin film Bi2212, Bi(2201, 2212, 2223) phase were appeared. It was confirmed the obtained field of stabilizing phase was represented in the diagonal direction of the right below end in the Arrhenius plot of temperature of the substrate and $PO_3$, and it was distributed in the rezone.

The first attention in designing a transformer for low temperature rise should be to reduce losses. Leakage inductance and temperature rise are two of the more impotent problems facing the magnetic core technology of today's high frequency transformers. Excessive leakage inductance increases the stress on the switching transistors and limits the duty-cycle, and excessive temperature rise can lead the design limitation of high frequency transformer with high current. The flat transformer technology provides a very good solution to the problems of leakage inductance and thermal management for high frequency power. The critical magnetic components and windings are optimized and packaged within a completely assembled module. The turns ratio in a flat transformer is determined as the product of the number of elements or modules times the number of primary turns. The leakage inductance increase proportionately to the number of elements, but since it is reduced as the square of the turns, the net reduction can be very significant. The flat transformer modules use cores which have no gap. This eliminates fringing fluxes and stray flux outside of the core. The secondary windings are formed of flat metal and are bonded to the inside surface of the core. The secondary winding thus surrounds the primary winding, so nearly all of the flux is captured.

Silicone composites for high voltage insulator(HVI SC) were prepared by adding aluminum trihydrate(ATH) treated by surface treatment agent to base silicone compound at the ratio of 100:20, 100:40, 100:60, 100:80, and 100:100, respectively. And also, ATH was treated by various surface treatment agents, such as stearic acid, acryl silane vinyl silane under compounding process. electrical properties were investigated for the various contents of ATH and solace-treatment agents we mlas ured volume resistivity, breakdown and tracking resistance were for HVISC containing ATH treated by viuyl silane.

In the present study, the piezoelectricity and polarization of multilayer ceramic actuator, being designed to stack PMN-PZ-PT ceramic layers and Ag-Pd electrode layers alternatively, were investigated under a consideration of geometric factor, the volume ratio of the ceramic to the electrode layers. The actuators were fabricated by tape casting of 0.2Pb(Mg1/3Nb2/3)O3-0.38PbZrO3-0.42PbTiO3 followed by lamination and burnout & co-firing processes. The actuators of 10 10 0.62 nm3 in size were formed in a way that 60 200 m thick ceramics were stacked alternatively with 5 m thick electrode layer. Increases in polarization and electric field-induced displacement with thickness of the ceramic layer were attributed to change of 90o/180o domain ratio, which was affected by interlayer internal stress. The piezoelectricity and actuation behaviors were found to depend upon the volume ratio (or thickness ratio) of ceramic to electrode layers.

Most of all, DTC drive is very simple in its implementation because it needs only two hysteresis comparator and switching vector table for both flux and torque control. The switching strategy of a conventional direct torque control scheme which is based on hysteresis comparator results in a variable switching frequency which depends on the speed, flux, stator voltage and the hysteresis of the comparator. The amplitude of hysteresis band greatly influences on the drive performance such as flux and torque ripple and inverter switching frequency. In this paper the influence of the amplitudes of flux and torque hysteresis bands and sampling time of control program on the torque and flux ripples are investigated. Simulation results confirm the superiority of the DTC under the proposed method over the conventional DTC.

Silicon has been developed as an alternate anode material for lithium secondary batteries. A simple approach to improve the electrical contact of silicon powder has described. Carbon-coated and silver-coated silicon have been prepared by chemical vapor deposition and electroless plating respectively. Assembled cells, which consisted of surface modified silicon, lithium foil and $Li^+$ contained organic electrolyte, have been studied using electrochemical methods. Carbon-coated silicon was improved in the electrochemical performance such as reversibility and resistance compared to surface-unmodified silicon.

Ozonic use of sterilization and heat treatment of raw material to extend the conservation period of food recently is increased by hard vegetable or microorganism sterilization purpose of fruit. If ozone can create as is easy comparatively because do air or oxygen by raw material and schedule period passes, there is advantage that do not leave the second contaminant because being gotten restored by oxygen. Also, because the effect is big to decolorization beside disinfection effect about microorganism, deodorization, disjointing of venomousness hazardous substance, food save, Indoor air purge, good hand processing, hydrospace agricultural chemicals processing etc. the use extent is wide. This research ran parallel a sterilization experiment of E.coli colitis germs by ozone that manufacture ozonizer that use doped diamond maund electrode (BDD) by boron and searched special quality electrochemistry enemy of the ozonizer and is created. After cultivate E.coli colitis germs during 37C 1 day is LB ship, after do ozonation, was sterilized more than 90% by ozone as result that examine disinfection effect by substance microscope and could confirm excellency of diamond electrode.

The electrochemical oxidation of ascorbic acid(AA), serotonin(SE) and epinephrine(EP) have been performed at poly N,N-dimethylaniline(PDMA) film coated diamond electrode. This cationic polymer film is electrochemically deposited on boron-doped diamond electrode surface. Unlike the bard electrode, the polymer film-coated diamond electrode can well separate the oxidation potential of AA by 200mV. Thus this electrode can be successfully used for the simultaneoud detection of both species. Increases in the concentration of AA do not affect the reponse of EP and SE.

To investigate the electrical fire identification due to conductor structure analysis of an electrical wire, we are studied by temperature heating test, over current test, short test and electric molten marks. And metal structure analysis of wire by short, we are found out increase in crystal grain with heating temperature. Structure of specimen at over current 300[%] occurred hardly structure formation and boundary of grain.