Switching properties of magnetic tunnel junctions with CoFeSiB free layer

CoFeSiB 자유층을 갖는 MTJs의 스위칭 특성

  • Hwang J. Y. (Dept. of Physics, Sookmyung Women's University) ;
  • Kim S. S. (Dept. of Physics, Sookmyung Women's University) ;
  • Yim H. I. (Dept. of Physics, Sookmyung Women's University) ;
  • Kim M. Y (Dept. of Physics, Sookmyung Women's University) ;
  • Rhee J. R. (Dept. of Physics, Sookmyung Women's University) ;
  • Chun B.S. (Dept. of Materials Science and Engineering, Korea University) ;
  • Kim Y. K. (Dept. of Materials Science and Engineering, Korea University) ;
  • Kim T. W. (Material and Sciences Laboratory, Samsung Advanced Institute of Technology) ;
  • Lee S.S. (Dept. of Computer and Electronic Physics, Sangji University) ;
  • Hwang D. G. (Dept. of Computer and Electronic Physics, Sangji University) ;
  • Yu S. C. (Dept. of Physics Chungbuk National University) ;
  • Lee H. B. (Dept. of Physics Kongju National University)
  • Published : 2005.12.01