Switching field and tunneling magnetoresistance of NiFeSiB synthetic antiferromagnet free layered magnetic tunnel junctions

NiFeSiB 합성형 반강자성 자유층을 갖는 자기터널접합의 스위칭자기장과 터널링자기저항

  • Chun B.S. (Dept. of Materials Science and Engineering, Korea University) ;
  • Kim Y. K. (Dept. of Materials Science and Engineering, Korea University) ;
  • Hwang J. Y. (Dept. of Physics, Sookmyung Women's University) ;
  • Rhee J. R. (Dept. of Physics, Sookmyung Women's University) ;
  • Kim T. W. (Material and Devices Laboratory, Samsung Advanced Institute of Technology)
  • Published : 2005.12.01