Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2005.11a
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- Pages.16-17
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- 2005
Switching Characteristics Enhancement of PT type Power Diodes by means of Particle Irradiation
입자 조사에 의한 PT형 전력 다이오드의 스위칭 특성 향상
- Kim, Byoung-Gil (Division of Electronic Engineering Uiduk University) ;
- Choi, Sung-Hwan (School of Electrical Engineering and Computer Science Kyungpook National University) ;
- Lee, Jong-Hun (Fairchild Korea) ;
- Bae, Young-Ho (Division of Electronic Engineering Uiduk University)
- Published : 2005.11.10
Abstract
Local lifetime control by ion implantation has become an useful tool for production of modern power devices. In this work, punch-through diodes were irradiated with protons for the high speed power diode fabrication. Proton irradiation was executed at the various energy and dose conditions. Characterization of the device was performed by I-V, C-V and Trr measurement. We obtained enhanced reverse recovery time characteristics which was about 45% of original device and about 73% of electron irradiated device. The measurement results showed that proton irradiation was able to effectively reduce minority carrier lifetime.