Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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I-V Measurements of large area $HgI_2$ X-ray detector produced by PIB method

PIB법을 이용한 대면적 $HgI_2$ 검출기의 I-V 특성평가

  • 김경진 (인제대학교 의용공학과) ;
  • 박지군 (인제대학교 의용공학과) ;
  • 강상식 (인제대학교 의용공학과) ;
  • 차병열 (인제대학교 의용공학과) ;
  • 조성호 (인제대학교 의용공학과) ;
  • 신정욱 (인제대학교 의용공학과) ;
  • 문치웅 (인제대학교 방사선영상 연구실) ;
  • 남상희 (인제대학교 방사선영상 연구실) ;
  • Published : 2005.11.10
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Abstract

In this paper, we investigated electrical characteristics of the X-ray detector of mercuric iodide (HgI2) film fabricated by PIB(Particle-in-Binder) Method on ITO substrates 17cm$\times$20cm in size with thicknesses ranging from approximately 200${\mu}m$ to 240${\mu}m$. In the present study, using I-V measurements, their electrical properties such as leakage current, X-ray sensitivity, and signal-to-noise ratio (SNR),were investigated. The results of our study can be useful in the future design and optimization of direct active-matrix flat-panel detectors (AMFPD) for various digital X-ray imaging modalities.

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