한국정보디스플레이학회:학술대회논문집

한국정보디스플레이학회 (The Korean Infomation Display Society)
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Recent Progress in Organic Thin Film Transistor on the Plastic Substrates

  • Suh, Kyung-Soo (Electronics and Telecommunications Research Institute Basic Research Lab.) ;
  • Kang, Seung-Youl (Electronics and Telecommunications Research Institute Basic Research Lab.) ;
  • Ahn, Seong-Deok (Electronics and Telecommunications Research Institute Basic Research Lab.) ;
  • Oh, Ji-Young (Electronics and Telecommunications Research Institute Basic Research Lab.) ;
  • You, In-Kyu (Electronics and Telecommunications Research Institute Basic Research Lab.) ;
  • Kim, Gi-Hyun (Electronics and Telecommunications Research Institute Basic Research Lab.) ;
  • Baek, Kyu-Ha (Electronics and Telecommunications Research Institute Basic Research Lab.) ;
  • Kim, Chul-Am (Electronics and Telecommunications Research Institute Basic Research Lab.) ;
  • Hwang, Chi-Sun (Electronics and Telecommunications Research Institute Basic Research Lab.) ;
  • KoPark, Sang-Hee (Electronics and Telecommunications Research Institute Basic Research Lab.) ;
  • Yang, Yong-Suk (Electronics and Telecommunications Research Institute Basic Research Lab.) ;
  • Chung, Sung-Mook (Electronics and Telecommunications Research Institute Basic Research Lab.) ;
  • Lee, Jeong-Ik (Electronics and Telecommunications Research Institute Basic Research Lab.) ;
  • Do, Lee-Mi (Electronics and Telecommunications Research Institute Basic Research Lab.) ;
  • Chu, Hye-Yong (Electronics and Telecommunications Research Institute Basic Research Lab.) ;
  • Kang, Kwang-Yong (Electronics and Telecommunications Research Institute Basic Research Lab.)
  • 발행 : 2005.07.19
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초록

Pentacene based OTFT on PC and PES plastic substrates have been fabricated in a scale of 5 inches. We could get a small OTFT device enough to be applicable for AMOLED by acquiring the at least misalignment margin through a contact aligner. And also we could find out the degradation of device parameter through the integration processes and improve the properties by using a buffer layer as an etch stopper in an active patterning. Through these, the mobility of device is more than about $0.2cm^2/Vs$ and $I_{on}/I_{off}$ is higher than $10^5$.

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