한국정보디스플레이학회:학술대회논문집

한국정보디스플레이학회 (The Korean Infomation Display Society)
권호 표지

Fabrication of MILC poly-Si TFT using scanning-RTA and light absorption layer

  • Pyo, Yu-Jin (School of Materials Science and Engineering, Seoul National University) ;
  • Kim, Min-Sun (School of Materials Science and Engineering, Seoul National University) ;
  • Kim, Young-Soo (School of Materials Science and Engineering, Seoul National University) ;
  • Song, Nam-Kyu (School of Materials Science and Engineering, Seoul National University) ;
  • Joo, Seung-Ki (School of Materials Science and Engineering, Seoul National University)
  • 발행 : 2005.07.19
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초록

We investigated light absorption layer effect on metal-induced lateral crystallization (MILC) growth rate and MILC thin films transistors (TFTs). As annealing method, we used scanning-rapid thermal annealing (RTA). MILC growth rate which was crystallized by light absorption layer and using scanning-RTA was 3 times than normal MILC which was without light absorption layer growth rate. Also we compared MILC TFTs characteristics which were combined to light absorption layer with conventional MILC TFTs. After scanning-RTA process, MILC-TFTs which were with light absorption layer were superior to conventional MILC-TFTs. With this new MILC-TFTs structure, we could reduced crystallization time and obtain good electrical properties.

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