한국정보디스플레이학회:학술대회논문집
- 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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- Pages.310-313
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- 2005
Dopant activation by using CW laser for LTPS processing
- Kim, Ki-Hyung (Advanced Display Research Center, Kyung Hee University, New Functional Materials and Device Lab, Han Yang University) ;
- Kim, Eun-Hyun (Advanced Display Research Center, Kyung Hee University) ;
- Ku, Yu-Mi (Advanced Display Research Center, Kyung Hee University) ;
- Park, Seong-Jin (Advanced Display Research Center, Kyung Hee University) ;
- Uchiike, Heiju (Advanced Display Research Center, Kyung Hee University) ;
- Kim, Chae-Ok (New Functional Materials and Device Lab, Han Yang University) ;
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Jang, Jin
(Advanced Display Research Center, Kyung Hee University)
- 발행 : 2005.07.19
초록
CW laser dopant activation (CLDA) is suggested as an alternative to conventional thermal annealing. The sheet resistance of the ion doped poly-Si after CLDA is sufficiently low compared to the value measured after thermal annealing. The surface damage due to ion doping on the poly-Si can be recovered while CW laser scan for dopant activation. Therefore, the CLDA can be applied to LTPS processing.
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