한국정보디스플레이학회:학술대회논문집
- 2005.07b
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- Pages.1112-1115
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- 2005
Ultra low sheet resistance on poly silicon film by Excimer laser activation
- Lim, Hyuck (Samsung Advanced Institute of Technology) ;
- Yin, Huaxiang (Samsung Advanced Institute of Technology) ;
- Xianyu, Wenxu (Samsung Advanced Institute of Technology) ;
- Kwon, Jang-Yeon (Samsung Advanced Institute of Technology) ;
- Zhang, Xiaoxin (Samsung Advanced Institute of Technology) ;
- Cho, Hans-S (Samsung Advanced Institute of Technology) ;
- Kim, Jong-Man (Samsung Advanced Institute of Technology) ;
- Park, Kyung-Bae (Samsung Advanced Institute of Technology) ;
- Kim, Do-Young (Samsung Advanced Institute of Technology) ;
- Jung, Ji-Sim (Samsung Advanced Institute of Technology) ;
- Noguchi, Takashi (Samsung Advanced Institute of Technology, Sungkyunkwan University)
- Published : 2005.07.19
Abstract
In this study, we performed excimer laser activation on Phosphorus or Boron doped a-Si (amorphous silicon) film. We've got a very low sheet resistance (Rs), Rs was 60 ohm/sq. with phosphorus doping and was 65 ohm/sq. with boron doping at each optimized laser irradiation condition. We've found Rs on activated thin film showed an unprecedented behavior in both cases, because Rs had a strong dependency on the crystallinity of the activated Si film.
Keywords