Thin-Beam Directional X'tallization Technology for Fabrication of Low Temperature Poly-Si Transistors

We propose an improved laser crystallization method based on a directional lateral growth technique. To assess the feasibility of this technique, we have developed an experimental prototype using a 351 nm XeF excimer laser and special optics to produce a long and extremely sharp, narrow beam without need for a photo type mask pattern. Using this system, we have demonstrated very uniform directional laterally grown poly-Si films without any grain boundary protrusions. We believe this method can meet the high performance and uniformity requirements needed for future TFTs in System On Panel (SOP) and OLED applications, as well as providing high process throughput for mass production.