Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Interaction between Oxygens and Secondary Defects Induced in Silicon by High Energy $B^+$Ion Implantation and Two-Step Annealing

  • Yoon, Sahng-Hyun (Department of Electrical Engineering, Doowon Technical College) ;
  • Jeon, Joon-Hyung (Department of Electrical Engineering, Doowon Technical College) ;
  • Kim, Kwang-Tea (Department of Electrical Engineering, Doowon Technical College) ;
  • Kim, Hyun-Hoo (Department of Electrical Engineering, Doowon Technical College) ;
  • Park, Chul-Hyun (Department of Electrical Engineering, Chungbuk Nat'l Univ.)
  • Published : 2005.07.07
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Abstract

Intrinsic gettering is usually used to improve wafer quality which is an important factor for reliable ULSI devices. The two-step annealing method was adopted in order to investigate interactions between oxygens and secondary defects during oxygen precipitation process in lightly and heavily boron doped silicon wafers with high energy $^{11}B^+$ ion implantation. Secondary defects were inspected nearby the projected range by high resolution transmission electron microscopy. Oxygen pileup was measured in the vicinity of the projected range by secondary ion mass spectrometry for heavily boron doped silicon wafers.

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