Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2005.05b
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- Pages.29-32
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- 2005
Properties of Polymethyl methacrylate (PMMA) for Polymer Gate Dielectric Thin Films Prepared by Spin Coating
Spin coating 공정을 이용한 Polymethyl methacrylate (PMMA) 박막의 polymer gate dielectric layer로써의 특성평가
- Na, Moon-Kyong (Korea Electrotechnology Research Institute) ;
- Kang, Dong-Pil (Korea Electrotechnology Research Institute) ;
- Ahn, Myeog-Sang (Korea Electrotechnology Research Institute) ;
- Myoung, In-Hye (Korea Electrotechnology Research Institute) ;
- Kang, Young-Taec (Korea Electrotechnology Research Institute)
- Published : 2005.05.27
Abstract
Poly (methyl methacrylate) (PMMA) is one of the promising representive of polymer gate dielectric for its high resistivity and sutible dielectric constant. PMMA (Mw=96700) films were prepared on p-Si by spin coating method. PMMA were coated compactively and flatly as observeed by AFM. MIS(Al/PMMA/p-Si) structure was made and capacitance-voltage (C-V) and current-voltage (I-V) measurements were done with PMMA films for different thermal treatment temperature. PMMA films were showed proper dielectric constant and breakdown voltage. Above the glass transition temperature PMMA films degraded. C-V measured at various frequencies, dielectric constant increased a little. The absence of hysteresis in the C-V characteristics, which eliminate the possibility of mobile charges in the PMMA films. The observed thermal stability, smooth surfaces, dielectric constant, I-V behavior implies PMMA formed by spin coating can be used as an efficient gate dielectric layer in OTFTs.