Thermoelectric Material Design in Pseudo Binary Systems of $Mg_2Si-Mg_2Ge-Mg_2Sn$ on the Powder Metallurgy Route

  • Published : 2006.09.24

Abstract

New PM route via bulk mechanical alloying is developed to fabricate the solid solution semi-conductive materials with $Mg_2Si_{1-x}Ge_x$ and $Mg_2Si_{1-y}Sn_y$ for 0 < x, y < 1 and to investigate their thermoelectric materials. Since $Mg_2Si$ is n-type and both $Mg_2Ge$ and $Mg_2Sn$ are p-type, pn-transition takes place at the specified range of germanium content, x, and tin content, y. Through optimization of chemical composition, solid-solution type thermoelectric semi-conductive materials are designed both for n-and p-type materials.

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