한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

MgO를 첨가한 $Ba_xSr_{1-x}TiO_3$ 후막의 소결거동과 가변 유전특성

Effect of Sintering and Tunable Dielectric Properties of BST Thick Films with MgO addition

  • 전소현 (경남대학교 재료공학) ;
  • 김인성 (한국전기연구원 전자기소자연구그룹) ;
  • 송재성 (한국전기연구원 전자기소자연구그룹) ;
  • 윤존도 (경남대학교 재료공학)
  • Jeon, So-Hyun (Dept of material engineering, Kyungnam University) ;
  • Kim, In-Sung (Electric & Magnetic Devices Group, Korea Electrotechnology Research Institute) ;
  • Song, Jae-Sung (Electric & Magnetic Devices Group, Korea Electrotechnology Research Institute) ;
  • Yoon, Jon-Do (Dept of material engineering, Kyungnam University)
  • 발행 : 2006.11.09
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초록

(BaSr)$TiO_3$ thick films were prepared by tape casting method, using $BaTiO_3$ and $SrTiO_3$ powder slurry in order to investigate dielectric properties. With MgO additives, the sintering density was 5.8 $g/cm^3$ and the BST sample exhibited the maximum dielectric constant, tunability at temperatures near phase transition point. Dielectric loss be on the decrease because the interface is not a pore. BST sample be applicable on tunable device.

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