Formation of Anodized GaN Nanopores on InGaN/GaN Multi-quantum Well Structures

InGan/GaN 다중양자우물구조 위에 제작되어진 산화된 GaN 나노구멍

We fabricated GaN nanopores m the etching process of anodic oxidation of aluminum. The aluminum was deposited by using E-beam evaporator on p-type GaN. After the aluminum was anodized GaN structure was exposed to the electric field with the oxidat species. The fabricated nanopore structure provides the enhanced intensity of light emission at the wavelengths 470 nm. We investigated the structure of the GaN nanopores from FE-SEM and EDS measurements.