Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Effect of Ce Substitution on Microstructure and Ferroelectric Properties of $Bi_4Ti_3O_{12}$ Thin Films Prepared by MOCVD

MOCVD로 증착된 $Bi_4Ti_3O_{12}$ 박막의 미세구조와 강유전성에 Cerium 첨가가 미치는 영향

  • Kang, Dong-Kyun (Department of Materials Science and Engineering, Korea Univ.) ;
  • Park, Won-Tae (Department of Materials Science and Engineering, Korea Univ.) ;
  • Kim, Byong-Ho (Department of Materials Science and Engineering, Korea Univ.)
  • Published : 2006.06.22
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Abstract

Ferroelectric Cerium-substituted $Bi_4Ti_3O_{12}$ thin films with a thickness of 200 nm were deposited using the liquid delivery metal organic chemical vapor deposition process onto a Pt(111)/Ti/$SiO_2$/Si(100) substrate. At annealing temperature above $600^{\circ}C$, the BCT thin films became crystallized and exhibited a polycrystalline structure. The BCT thin film annealed at $720^{\circ}C$ showed a large remanent polarization ($2P_r$) of $44.56\;{\mu}C/cm^2$ at an applied voltage of 5V. The BCT thin film exhibits a good fatigue resistance up to $1{\times}10^{11}$ switching cycles at a frequency of 1 MHz with applied electric field of ${\pm}5\;V$.

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