Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Fabrication of SmBCO coated conductor using $CeO_2$ single buffer layer

$CeO_2$ 단일 완충층을 이용한 SmBCO 초전도테이프 제조

  • Kim, T.H. (Korea Electrotechnology Research Institute) ;
  • Kim, H.S. (Korea Electrotechnology Research Institute) ;
  • Oh, S.S. (Korea Electrotechnology Research Institute) ;
  • Yang, J.S. (Korea Electrotechnology Research Institute) ;
  • Ko, R.K. (Korea Electrotechnology Research Institute) ;
  • Ha, D.W. (Korea Electrotechnology Research Institute) ;
  • Song, K.J. (Korea Electrotechnology Research Institute) ;
  • Ha, H.S. (Korea Electrotechnology Research Institute) ;
  • Jung, K.D. (KISWIRE) ;
  • Pa, K.C. (Kyungpook national univ.) ;
  • Cho, S.H. (Kyungpook national univ.)
  • Published : 2006.06.22
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Abstract

High temperature superconducting coated conductor has multi-layer structure of protecting layer/superconducting layer/buffer layer/metallic substrate. The buffer layer consists of multi layer, and the architecture most widely used in RABiTS approach is $CeO_2$(cap layer)/YSZ(diffusion barrier layer)/$CeO_2$(seed layer). Multi-buffer layer deposition required many times and process. Therefore single buffer layer deposition study reduce 2G HTS manufacture efforts. Evaporation technique for single buffer deposition method is used for the $CeO_2$ layer. $CeO_2$ single buffer film could be achieved in the chamber. Detailed deposition conditions (temperature and partial gas pressure of deposition) were investigated for the rapid growth of high quality $CeO_2$ single buffer film.

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