한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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- Pages.537-538
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- 2006
MgO(100)기판에 성장시킨 Bi2212 에피택셜 박막의 R-T특성
R-T characteristic of Bi2212 Epitaxial thin films by growth in MgO(100) substrate
- Yang, Seung-Ho (Dongshin Univ.) ;
- Lim, Jung-Kwan (Dongshin Univ.) ;
- Park, Yong-Pil (Dongshin Univ.)
- 발행 : 2006.06.22
초록
BSCCO thin films have been fabricated by epitaxy growth at an ultra-low growth rate. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 650 and