Proceedings of the Korean Institute of Navigation and Port Research Conference (한국항해항만학회:학술대회논문집)
- 2006.06b
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- Pages.91-96
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- 2006
A Design of High Efficiency Doherty Power Amplifier for Microwave applications
마이크로파용 고효율 Doherty 전력 증폭기 설계
Abstract
In this paper, the high efficiency Doherty power amplifier has been designed and realized for microwave applications. The Doherty amplifier has been implemented using silicon MRF 281 LOMOS FET. The RF performances of the Doherty power amplifier (a combination of a class AB carrier amplifier and a bias..tuned class C peaking amplifier) have been compared with those of a class AB amplifier alone. The realized Doherty power amplifier PldB output power has 33dBm at 2.3GHz frequency. Also the Doherty power amplifier shows 11dB gain and -17.8dB input return loss at 2.3GHz to 2.4GHz. The designed Doherty amplifier has been improved the average PAE by 10% higher efficiency than a class AB amplifier alone. The Maximum PAE of designed Doherty power amplifier has been 39%.
본 논문에서는 마이크로파 대역의 주파수를 이용해 고효율 도허티 전력 증폭기를 설계 및 제작하였다. 도허티 전력증폭기는 MRF 281 LDMOS FET를 사용하여 구현하였고, 도허티 전력 증폭기의 성능을 AB급 증폭기만 있을 때와 비교하였다. 측정결과, 구현한 도허티 전력 증폭기는 PldB 출력전력이 2.3GHz 주파수에서 33.0dBm을 가진다. 또한, 도허티 증폭기는 주파수
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