Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Schottky barrier poly-Si thin film transistor by using erbium-silicided source and drain

어븀-실리사이드를 이용한 쇼트키 장벽 다결정 실리콘 박막 트랜지스터

  • Shin, Jin-Wook (Department of Electronic Materials Engineering, Kwangwoon Univ.) ;
  • Koo, Hyun-Mo (Department of Electronic Materials Engineering, Kwangwoon Univ.) ;
  • Jung, Myung-Ho (Department of Electronic Materials Engineering, Kwangwoon Univ.) ;
  • Choi, Chel-Jong (Nano-Bio Electronic Devices Team, Electronics and Telecommunications Research Institute) ;
  • Jung, Won-Jin (Nano-Bio Electronic Devices Team, Electronics and Telecommunications Research Institute) ;
  • Cho, Won-Ju (Department of Electronic Materials Engineering, Kwangwoon Univ.)
  • 신진욱 (광운대학교 전자재료공학과) ;
  • 구현모 (광운대학교 전자재료공학과) ;
  • 정명호 (광운대학교 전자재료공학과) ;
  • 최철종 (한국전자통신연구원 IT융합부품 연구소) ;
  • 정원진 (한국전자통신연구원 IT융합부품 연구소) ;
  • 조원주 (광운대학교 전자재료공학과)
  • Published : 2007.11.01
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Abstract

Poly-Si Schottky barrier Thin Film Transistor (SB-TFT) is manufactured with erbium silicided source/drain. High quality poly-Si film was obtained by crystallizing the amorphous Si film with Excimer laser annealing (ELA) method. The fabricated poly-Si SB-TFT devices showed low leakage current and large on/off current ratio. Moreover, the electrical characteristics were considerably improved by 3% $H_2/N_2$ gas annealing, which is attributed to the reduction of trap states at the grain boundaries and interface trap states at gate oxide/poly-si channel.

Keywords