Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Study of Hafnium Silicate by NO Gas Annealing Treatment

NO gas 후속 열처리를 통한 Hf-silicate에 대한 연구

  • 조영대 (연세대학교 세라믹공학과) ;
  • 서동찬 (연세대학교 세라믹공학과) ;
  • 고대홍 (연세대학교 세라믹공학과)
  • Published : 2007.11.01
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Abstract

The physical and electrical properties of nitrided Hf-silicate films, incorporated by NO gas annealing, were investigated by XPS, NEXAFS, TEM and C-V measurement. We confirmed the nitrogen incorporation during NO gas annealing treatment effectively enhances the thermal stability of Hf-silicate. The suppression of phase separation was observed in Hf-silicate films with high nitrogen contents. The negative shift of threshold voltage is caused by the incorporation of nitrogen in the hafnium silicate films.

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