Planarization technology of thick copper film structure for power supply

전력 소자용 후막 구리 구조물의 평탄화

  • Joo, Suk-Bae (Precision Manufacturing System Div., Graduate School of Mechanical Engineering, Pusan National Univ.) ;
  • Jeong, Suk-Hoon (Precision Manufacturing System Div., Graduate School of Mechanical Engineering, Pusan National Univ.) ;
  • Lee, Hyun-Seop (Precision Manufacturing System Div., Graduate School of Mechanical Engineering, Pusan National Univ.) ;
  • Kim, Hyoung-Jae (Korea Institute of Industrial Technology) ;
  • Jeong, Hae-Do (Precision Manufacturing System Div., Graduate School of Mechanical Engineering, Pusan National Univ.)
  • 주석배 (부산대학교 대학원 기계공학부 정밀가공시스템) ;
  • 정석훈 (부산대학교 대학원 기계공학부 정밀가공시스템) ;
  • 이현섭 (부산대학교 대학원 기계공학부 정밀가공시스템) ;
  • 김형재 (한국생산기술연구원 부산지역본부) ;
  • 정해도 (부산대학교 대학원 기계공학부 정밀가공시스템)
  • Published : 2007.11.01

Abstract

This paper discusses the planarization process of thick copper film structure used for power supply device. Chemical mechanical polishing(CMP) has been used to remove a metal film and obtain a surface planarization which is essential for the semiconductor devices. For the thick metal removal, however, the long process time and other problems such as dishing, delamination and metal layer peeling are being issued, Compared to the traditional CMP process, Electro-chemical mechanical planarization(ECMP) is suggested to solve these problems. The two-step process composed of the ECMP and the conventional CMP is used for this experiment. The first step is the removal of several tens ${\mu}m$ of bulk copper on patterned wafer with ECMP process. The second step is the removal of residual copper layer aimed at a surface planarization. For more objective comparison, the traditional CMP was also performed. As an experimental result, total process time and process defects are extremely reduced by the two-step process.

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