Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on the Two-Step CMP for Prevention of Over-polishing

과다연마 방지를 위한 두 단계 CMP에 관한 연구

  • Shin, Woon-Ki (Precision Manufacturing System Div., Graduate School of Mechanical Engineering, Pusan National Univ.) ;
  • Kim, Hyoung-Jae (Korea Institute of Industrial Technology) ;
  • Park, Boum-Young (Precision Manufacturing System Div., Graduate School of Mechanical Engineering, Pusan National Univ.) ;
  • Park, Ki-Hyun (Precision Manufacturing System Div., Graduate School of Mechanical Engineering, Pusan National Univ.) ;
  • Joo, Suk-Bae (Precision Manufacturing System Div., Graduate School of Mechanical Engineering, Pusan National Univ.) ;
  • Kim, Young-Jin (Precision Manufacturing System Div., Graduate School of Mechanical Engineering, Pusan National Univ.) ;
  • Jeong, Hae-Do (Precision Manufacturing System Div., Graduate School of Mechanical Engineering, Pusan National Univ.)
  • 신운기 (부산대학교 대학원 기계공학부 정밀가공시스템) ;
  • 김형재 (한국생산기술연구원 부산지역본부) ;
  • 박범영 (부산대학교 대학원 기계공학부 정밀가공시스템) ;
  • 박기현 (부산대학교 대학원 기계공학부 정밀가공시스템) ;
  • 주석배 (부산대학교 대학원 기계공학부 정밀가공시스템) ;
  • 김영진 (부산대학교 대학원 기계공학부 정밀가공시스템) ;
  • 정해도 (부산대학교 대학원 기계공학부 정밀가공시스템)
  • Published : 2007.11.01
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Abstract

Over-polishing is required to completely remove the material of top surface across whole wafer, in spite of a local dishing problem. This paper introduces the two-step CMP process using protective layer and high selectivity slurry, to reduce dishing amount and variation. The 30nm thick protective oxide layer was deposited on the pattern, and then polished with low selectivity slurry to partially remove the projected area while suppressing the removal rate of the recessed area. After the first step CMP process, high selectivity slurry was used to minimize the dishing amount and variation in pattern structure. Experimental result shows that two-step CMP process can be successfully applicable to reduce the dishing defect generated in over-polishing.

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