한국정보통신학회:학술대회논문집 (Proceedings of the Korean Institute of Information and Commucation Sciences Conference)

한국정보통신학회 (The Korea Institute of Information and Commucation Engineering)
권호 표지

A New Technique to Improve ZnO-based FBAR Device Performances

  • Mai, Linh (School of Engineering, Information & Communications University (ICU)) ;
  • Lee, Jae-Young (School of Engineering, Information & Communications University (ICU)) ;
  • Pham, Van Su (School of Engineering, Information & Communications University (ICU)) ;
  • Yoon, Gi-Wan (School of Engineering, Information & Communications University (ICU))
  • 발행 : 2007.06.01
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초록

This paper presents the improvement of the resonance characteristics of film bulk acoustic-wave resonator (FBAR) devices fabricated on multilayer Bragg reflectors (BRs) based on inserting ultra-thin chromium (Cr) adhesion layers into BRs and post-annealing processes. The measurements show excellent improvement of return loss $(S_{11})$ and Q-factor by the combined use of Cr adhesion layers and thermal treatments particularly for 120 minutes at $200^{\circ}C$.

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