한국정보통신학회:학술대회논문집 (Proceedings of the Korean Institute of Information and Commucation Sciences Conference)

한국정보통신학회 (The Korea Institute of Information and Commucation Engineering)
권호 표지

Effects of Multi-layer Bragg Reflectors on ZnO-based FBAR Devices

  • Lee, Jae-Young (Information and Communications University (ICU)) ;
  • Mai, Lihn (Information and Communications University (ICU)) ;
  • Pham, Van-Su (Information and Communications University (ICU)) ;
  • Yoon, Gi-Wan (Information and Communications University (ICU))
  • 발행 : 2007.06.01
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초록

In this paper, the resonance characteristics of ZnO-based film bulk acoustic resonator (FBAR) devices with high-quality multi-layer reflectors are proposed. The ultrathin Cr film $(300\;\AA-thick)$ between $SiO_2$ film and W film is formed by a sputtering-deposition in order to enhance the adherence at their interfaces. The resonance frequency was observed to vary with the number of the reflectors. This seems to be attributed to the change in the effective thickness of the ZnO film. Also, increasing the number of layers has led to a significant improvement of the series/parallel quality factor.

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