Transparent Conductive Oxides for Display Applications

  • Szyszka, B. (Fraunhofer Institute for Surface Engineering and Thin Films IST) ;
  • Ruske, F. (Fraunhofer Institute for Surface Engineering and Thin Films IST) ;
  • Sittinger, V. (Fraunhofer Institute for Surface Engineering and Thin Films IST) ;
  • Pflug, A. (Fraunhofer Institute for Surface Engineering and Thin Films IST) ;
  • Werner, W. (Fraunhofer Institute for Surface Engineering and Thin Films IST) ;
  • Jacobs, C. (Fraunhofer Institute for Surface Engineering and Thin Films IST) ;
  • Kaiser, A. (Fraunhofer Institute for Surface Engineering and Thin Films IST) ;
  • Ulrich, S. (Fraunhofer Institute for Surface Engineering and Thin Films IST)
  • Published : 2007.08.27

Abstract

We report on our material and process research on ZnO:Al films and on our investigations on wet chemical etching using a variety of etching solutions. We achieve resistivity as low as $750{\mu}{\Omega}cm$ for ZnO:Al films with film thickness of 140 nm. Etching with phosphorous acid allows for accurate fine patterning of the ZnO:Al films on glass substrates.

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