Polysilicon Thin Film Transistors on spin-coated Polyimide layer for flexible electronics

  • Pecora, A. (Istituto di Fotonica e Nanotecnologie (IFN)) ;
  • Maiolo, L. (Istituto di Fotonica e Nanotecnologie (IFN)) ;
  • Cuscuna, M. (Istituto di Fotonica e Nanotecnologie (IFN)) ;
  • Simeone, D. (Istituto di Fotonica e Nanotecnologie (IFN)) ;
  • Minotti, A. (Istituto di Fotonica e Nanotecnologie (IFN)) ;
  • Mariucci, L. (Istituto di Fotonica e Nanotecnologie (IFN)) ;
  • Fortunato, G. (Istituto di Fotonica e Nanotecnologie (IFN))
  • Published : 2007.08.27

Abstract

We developed a non self-aligned poly-silicon TFTs fabrication process at two different temperatures on spin-coated polyimide layer above Si-wafer. After TFTs fabrication, the polyimide layer was mechanically released from the Si-wafer and the devices characteristics were compared. In addition self-heating and hot-carrier induced instabilities were analysed.

Keywords