한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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Electrical Properties of the Molybdenum oxide doped Hole transport layer

  • Yun, Jin-Young (School of electrical engineering and computer science, Seoul National University) ;
  • Lee, Chang-Hee (School of electrical engineering and computer science, Seoul National University) ;
  • Song, Won-Jun (School of electrical engineering and computer science, Seoul National University) ;
  • Sung, Yeun-Joo (School of electrical engineering and computer science, Seoul National University)
  • Published : 2007.08.27
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Abstract

We report on a highly conductive and stable hole transporting layer comprising of N,N'-di(1- naphthyl)-N,N'-diphenylbenzidine $({\alpha}\;-NPD)$ doped with molybdenum oxide $(MoO_3)$. Compared to the reference device, the device with $MoO_3-doped$ hole transporting material exhibits higher conductivity and thermal stability. The temperature dependence of the current-voltage characteristics are studied for various $(MoO_3)$ doping concentration.

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