Design of Integrated a-Si:H Gate Driver Circuit with Low Noise for Mobile TFT-LCD

  • Lee, Yong-Hui (Mobile Display Development Team, LCD Business, Samsung Electronics CO., LTD) ;
  • Park, Yong-Ju (Mobile Display Development Team, LCD Business, Samsung Electronics CO., LTD) ;
  • Kwag, Jin-Oh (Mobile Display Development Team, LCD Business, Samsung Electronics CO., LTD) ;
  • Kim, Hyung-Guel (Mobile Display Development Team, LCD Business, Samsung Electronics CO., LTD) ;
  • Yi, Jun-Sin (Sungkyunkwan University)
  • Published : 2007.08.27

Abstract

This paper investigated a gate driver circuit with amorphous silicon for mobile TFT-LCD. In the conventional circuit, the fluctuation of the off-state voltage causes the fluctuation of gate line voltages in the panel and then image quality becomes worse. Newly designed gate driver circuit with dynamic switching inverter and carry out signal reduce the fluctuation of the off-state voltage because dynamic switching inverter is holding the off-state voltage and the delay of carry signal is reduced. The simulation results show that the proposed a-Si:H gate driver has low noise and high stability compared with the conventional one.

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