한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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High performance thin film transistor with ZnO channel layer deposited by DC magnetron sputtering

  • Moon, Yeon-Keon (Department of Materials Science and Engineering, Hanyang University) ;
  • Moon, Dae-Yong (Department of Materials Science and Engineering, Hanyang University) ;
  • Lee, Sang-Ho (Department of Materials Science and Engineering, Hanyang University) ;
  • Park, Ki-Hoon (Department of Materials Science and Engineering, Hanyang University) ;
  • Jeong, Chang-Oh (LCD R&D Center, Samsung Electronics Co., Ltd.) ;
  • Park, Jong-Wan (Department of Materials Science and Engineering, Hanyang University)
  • Published : 2007.08.27
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Abstract

We studied ZnO thin films deposited with DC magnetron sputtering for channel layer of TFTs. After analyzing of the basic physical and chemical properties of ZnO thin films, we fabricated a TFTunit test cell. The field effect mobility of $1.8\;cm^2/Vs$ and threshold voltage of -0.7 V were obtained.

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