Characterization of ZnO for Transparent Thin Film Transistor by Injection Type Delivery System of ALD

  • Published : 2007.08.27

Abstract

ZnO nano film for transparent thin film transistors is prepared by injection type source delivery system of atomic layer deposition. By using this delivery system the source delivery pulse time can dramatically be reduced to 0.005s in ALD system. ZnO nanofilms obtained at $150^{\circ}C$ are characterized.

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