한국정보디스플레이학회:학술대회논문집
- 2007.08a
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- Pages.904-907
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- 2007
Study of surface state density of hydrogenated amorphous silicon thinfilm transistors by admittance spectroscopy
- Hsieh, Ming-Ta (Department of Electrophysics, National Chiao Tung University) ;
- Chang, Chan-Ching (AUO Technology Center, AU Optronics Corporation) ;
- Chen, Jenn-Fang (Department of Electrophysics, National Chiao Tung University) ;
- Zan, Hsiao-Wen (Department of Photonics & Display Institute, National Chiao Tung University) ;
- Yen, Kuo-Hsi (Department of Photonics & Display Institute, National Chiao Tung University) ;
- Shih, Ching-Chieh (AUO Technology Center, AU Optronics Corporation) ;
- Chen, Chih-Hsien (AUO Technology Center, AU Optronics Corporation) ;
- Lee, Yeong-Shyang (AUO Technology Center, AU Optronics Corporation) ;
- Chiu, Hsin-Chih (AUO Technology Center, AU Optronics Corporation)
- Published : 2007.08.27
Abstract
We reported a simplified circuit model to investigate the interface states and the quality of a-Si film based on a MIS structure using admittance spectroscopy. The model can be employed easily to monitor the fabrication process of thin-film transistor and to obtain the important parameters.