한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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Gate dielectric SiO2 film deposition on poly Silicon using UV-excited ozone gas without heating substrate.

  • Kameda, Naoto (R&D center, Meidensha Corporation, Reseach Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology (AIST)) ;
  • Nishiguchi, Tetsuya (R&D center, Meidensha Corporation, Reseach Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology (AIST)) ;
  • Morikawa, Yoshiki (R&D center, Meidensha Corporation) ;
  • Kekura, Mitsuru (R&D center, Meidensha Corporation) ;
  • Nonaka, Hidehiko (Reseach Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology (AIST)) ;
  • Ichimura, Shingo (Reseach Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology (AIST))
  • Published : 2007.08.27
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Abstract

We have grown $SiO_2$ film on a polycrystalline Si layer using excited ozone gas, which is produced by ultra-violet light irradiation to ozone gas, without heating substrate. The obtained $SiO_2$ film shows dielectric properties comparable to the device quality films measured at the MIS capacitor configuration.

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