한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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ANALYSIS AND INTERPRETATION OF ELECTRIC CHARACTERISTICS OF DRY ETCHING PROCESS FOR THE TFT-LCD FABRICATION

  • Kwon, O-Dae (School of Electronics, Telecommunications and Computer Engineering, Korea Aerospace University) ;
  • Kwon, Han-Bum (School of Electronics, Telecommunications and Computer Engineering, Korea Aerospace University) ;
  • Yoo, Su-Jin (School of Electronics, Telecommunications and Computer Engineering, Korea Aerospace University) ;
  • Kim, Jong-Keun (School of Electronics, Telecommunications and Computer Engineering, Korea Aerospace University) ;
  • Jeon, Jae-Hong (School of Electronics, Telecommunications and Computer Engineering, Korea Aerospace University) ;
  • Lee, Kang-Woong (School of Electronics, Telecommunications and Computer Engineering, Korea Aerospace University) ;
  • Choe, Hee-Hwan (School of Electronics, Telecommunications and Computer Engineering, Korea Aerospace University) ;
  • Seo, Jong-Hyun (Department of Materials, Korea Aerospace University) ;
  • Seong, Dae-Jin (Center for Vacuum technology, Korea Research Institute of Standards and Science) ;
  • Kim, Jung-Hyun (Center for Vacuum technology, Korea Research Institute of Standards and Science) ;
  • Hyeon, Yong (Center for Vacuum technology, Korea Research Institute of Standards and Science)
  • Published : 2007.08.27
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Abstract

In the usual dry etching process for the TFT-LCD fabrication, it is hard to monitor the basic plasma parameters such as density and temperature. However, the basic parameters are easily monitored during the dry etching process. We have simultaneously measured the electric characteristics and basic plasma parameters of the dry etching chamber during the process, analyzed them to interpret plasma parameters. For the Ar plasma discharge case, we could obtain the density and temperature from the electric characteristics using a simple simple sheath model.

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