Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2007.06a
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- Pages.14-15
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- 2007
Static and Dynamic Characteristics of PT-IGBT by Proton Irradiation
양성자 주입 조건에 따른 PT-IGBT의 정특성 및 동특성 분석
- Choi, Sung-Hwan (Kyungpook National Univ.) ;
-
Lee, Yong-Hyun
(Kyungpook National Univ.)
;
- Bae, Young-Ho (Uiduk Univ.)
- Published : 2007.06.21
Abstract
Proton irradiation technology was used for improvement of switching characteristics of the PT-IGBT. The proton irradiation was carried out at 5.56 MeV energy from the back side of processed wafers and at 2.39 MeV energy from the front side of the wafers. The on-state and off-state I-V characteristics and switching properties of the device were analyzed and compared with those of un-irradiated device and e-beam irradiated device which was conventional method for minority carrier lifetime reduction. The proton irradiated device by 5.56 MeV energy was superior to e-beam irradiated device for the on-state and off-state I-V characteristics, nevertheless turn-off time of proton irradiated device was superior to that of the e-beam irradiated device.