Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Optimization of Electrolytes on Cn ECMP Process

Cu ECMP 공정에 사용디는 전해액의 최적화

  • Kwon, Tae-Young (Division of Materials and Chemical Engineering, Hanyang University) ;
  • Kim, In-Kwon (Division of Materials and Chemical Engineering, Hanyang University) ;
  • Cho, Byung-Gwun (Department of Bio-nano Technology, Hanyang University.) ;
  • Park, Jin-Goo (Division of Materials and Chemical Engineering, Hanyang University)
  • 권태영 (한양대학교 재료화학공학부) ;
  • 김인권 (한양대학교 재료화학공학부) ;
  • 조병권 (한양대학교 바이오나노공학과) ;
  • 박진구 (한양대학교 재료화학공학부)
  • Published : 2007.06.21
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Abstract

In semiconductor devices, Cu has been used for the formation of multilevel metal interconnects by the damascene technique. Also lower dielectric constant materials is needed for the below 65 nm technology node. However, the low-k materials has porous structure and they can be easily damaged by high down pressure during conventional CMP. Also, Cu surface are vulnerable to have surface scratches by abrasive particles in CMP slurry. In order to overcome these technical difficulties in CMP, electro-chemical mechanical planarization (ECMP) has been introduced. ECMP uses abrasive free electrolyte, soft pad and low down-force. Especially, electrolyte is an important process factor in ECMP. The purpose of this study was to characterize KOH and $KNO_3$ based electrolytes on electro-chemical mechanical. planarization. Also, the effect of additives such as an organic acid and oxidizer on ECMP behavior was investigated. The removal rate and static etch rate were measured to evaluate the effect of electro chemical reaction.

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