Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2007.06a
- /
- Pages.183-184
- /
- 2007
A Flip Chip Packaged 40 Gb/s InP HBT Transimpedance Amplifier
플립칩 패키지된 40Gb/s InP HBT 전치증폭기
- Ju, Chul-Won (High Speed SoC Research Department, ETRI) ;
- Lee, Jong-Min (High Speed SoC Research Department, ETRI) ;
- Kim, Seong-Il (High Speed SoC Research Department, ETRI) ;
- Min, Byoung-Gue (High Speed SoC Research Department, ETRI) ;
- Lee, Kyung-Ho (High Speed SoC Research Department, ETRI)
- Published : 2007.06.21
Abstract
A 40 Gb/s transimpedance amplifier IC was designed and fabricated with a InP/InGaAs HBTs technology. In this study, we interconnect 40Gbps trans impedance amplifier IC to a duroid substrate by a flip chip bonding instead of conventional wire bonding for interconnection. For flip chip bonding, we developed fine pitch bump with the