Proceedings of the Korean Institute of Surface Engineering Conference (한국표면공학회:학술대회논문집)

The Korean Institute of Surface Engineering (한국표면공학회)
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Phase stability and Morphology of high-k gate stack of $Si/SiO_2/HfO_2$ and $Si/SiO_2/ZrO_2$

  • Lee, Seung-Hwan (SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University) ;
  • Bobade, Santosh M. (SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University) ;
  • Yoo, W.J. (SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University)
  • Published : 2007.11.12
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Abstract

Phase stability and morphological investigation on the $Si/SiO_2/HfO_2$ and $Si/SiO_2/ZrO_2$ stack are presented. Thermal stability of $HfO_2$ and $ZrO_2$ determines the quality of interface and subsequently the performance of device. The stacks have been fabricated and annealed at $1000^{\circ}C$ for various time. In evolution of crystalline phase and morphology (electrical and geometrical) of high-k materials, annealing time and process are observed to be crucial factors. The crystallization of some phase has been observed in the case of $Si/SiO_2/HfO_2$. The chemical environment around Zr and Hf in respective samples is observed to be different.

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