4" E-ink Active-matrix Displays based on Ink-jet Printed Organic Thin Film Transistors

  • Koo, Bon-Won (Display Lab., Samsung Advanced Institute of Technology) ;
  • Kim, Do-Hwan (Display Lab., Samsung Advanced Institute of Technology) ;
  • Moon, Hyun-Sik (Display Lab., Samsung Advanced Institute of Technology) ;
  • Kim, Jung-Woo (Display Lab., Samsung Advanced Institute of Technology) ;
  • Jung, Eun-Jeong (Display Lab., Samsung Advanced Institute of Technology) ;
  • Kim, Joo-Young (Display Lab., Samsung Advanced Institute of Technology) ;
  • Jin, Yong-Wan (Display Lab., Samsung Advanced Institute of Technology) ;
  • Lee, Sang-Yun (Display Lab., Samsung Advanced Institute of Technology) ;
  • Kim, Jong-Min (Display Lab., Samsung Advanced Institute of Technology)
  • Published : 2008.10.13

Abstract

We demonstrate 4-in QVGA active-matrix electrophoretic display based on ink-jet printed organic transistors on glass substrates. Our TFT array had a bottom-gate, bottom-contact device architecture. The organic semiconductor and gate dielectric were solution processed. The field-effect mobility of the printed devices, calculated in the saturation region, was $0.1{\sim}0.3cm^2/Vs$ at Vg=-20 V.

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