Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2008.11a
- /
- Pages.248-249
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- 2008
Characteristics of ZnO thin Film according to RF power for applying TFT channel layers
투명 박막 트렌지스터 응용을 위한 RF power에 따른 ZnO 박막 특성 분석
- Park, Chung-Il (Sungkyungkwan Univ.) ;
- Kim, Young-Ryeol (Sungkyungkwan Univ.) ;
-
Park, Yong-Seob
(Sungkyungkwan Univ.)
;
- Kim, Hyung-Jin (Sungkyungkwan Univ.) ;
- Lee, Sung-Uk (Sungkyungkwan Univ.) ;
-
Hong, Byung-You
(Sungkyungkwan Univ.)
- 박청일 (성균관대학교 정보통신공학부) ;
- 김영렬 (성균관대학교 정보통신공학부) ;
-
박용섭
(성균관대학교 정보통신공학부)
;
- 김형진 (성균관대학교 정보통신공학부) ;
- 이성욱 (성균관대학교 정보통신공학부) ;
-
홍병유
(성균관대학교 정보통신공학부)
- Published : 2008.11.06
Abstract
ZnO (Zinc Oxide) thin film can be applied to various devices. Recently, ZnO film has been promoted in transparent TFTs (thin film transistors) because of high transparency and low temperature process. In this paper, ZnO thin films were grown on glass with the three conditions of RF sputtering power, which are 50W, 75W, 100W. Their structural, electrical and optical properties were investigated by using XRD, UV-Visible spectrometer and 4-point probes. In the ZnO film with 50W process, good crystallinity, high transmittance, and high sheet resistance were shown. In conclusion, the ZnO film with 50W can be an optimal channel layer of TFTs.