Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The effects of annealing of the ATO films prepared by RF magnetron sputtering

RF 마그네트론 스퍼터를 이용한 ATO 박막의 열처리 효과

  • Park, Sei-Yong (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Lee, Sung-Uk (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Park, Mi-Ju (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Kim, Young-Ryeol (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Hong, Byung-You (School of Information and Communication Engineering, Sungkyunkwan University)
  • 박세용 (성균관대학교 정보통신공학부) ;
  • 이성욱 (성균관대학교 정보통신공학부) ;
  • 박미주 (성균관대학교 정보통신공학부) ;
  • 김영렬 (성균관대학교 정보통신공학부) ;
  • 홍병유 (성균관대학교 정보통신공학부)
  • Published : 2008.11.06
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Abstract

Antimony (6 wt%) doped tin oxide (ATO) films to improve conductivity were deposited on 7059 coming glass by RF magnetron sputtering method for application to transparent electrodes. The ATO film was deposited at a working pressure of 5 mTorr and RF power of 175 W. We investigated the effects of the post-annealing temperature on structural, electrical and optical properties of the ATO films. The films were annealed at temperatures ranging from $300^{\circ}C$ to $600^{\circ}C$ in step of $100^{\circ}C$ using RTA equipment in vacuum ambient. X-ray diffraction (XRD) measurements showed the ATO films to be crystallized with a strong (101) preferred orientation as the annealing temperature increased. Electrical resistivity decreased significantly with annealing temperatures up to $600^{\circ}C$. ATO film annealed at temperature of $600^{\circ}C$ showed the lowest resistivity of $5.6\times10^{-3}\Omega$-cm. Optical transmittance increased significantly with annealing temperatures up to $600^{\circ}C$. The highest transmittance was 90.8 % in the visible range from 400 to 800 nm.

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