한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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- Pages.95-96
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- 2008
유기 박막 트랜지스터의 문턱전압 변화를 보상하기 위한 새로운 구조의 AMOLED 화소 회로에 관한 연구
A New AMOLED Pixel Circuit Compensating for Threshold Voltage Shift of OTFT
- 최종찬 (고려대학교 전기공학과 반도체 및 CAD 연구실) ;
- 심아람 (고려대학교 전기공학과 반도체 및 CAD 연구실) ;
- 이재인 (고려대학교 전기공학과 반도체 및 CAD 연구실) ;
- 윤봉노 (고려대학교 전기공학과 반도체 및 CAD 연구실) ;
- 성만영 (고려대학교 전기공학과 반도체 및 CAD 연구실)
- Choi, Jong-Chan (Semiconductor & CAD Lab., Dept. of Electrical Engineering, Korea University) ;
- Shin, A-Ram (Semiconductor & CAD Lab., Dept. of Electrical Engineering, Korea University) ;
- Lee, Jae-In (Semiconductor & CAD Lab., Dept. of Electrical Engineering, Korea University) ;
- Yoon, Bong-No (Semiconductor & CAD Lab., Dept. of Electrical Engineering, Korea University) ;
- Sung, Man-Young (Semiconductor & CAD Lab., Dept. of Electrical Engineering, Korea University)
- 발행 : 2008.06.19
초록
A new voltage-driven pixel circuit using soluble-processed organic thin film transistors (OTFTs) for an active matrix organic light emitting diode (AMOLED) is proposed. The proposed circuit is composed of four switching TFTs, one driving TFT and one storage capacitor. The proposed circuit can compensate for the degradation of OLED current caused by the threshold voltage shift of the OTFT. The simulation results show that the variation of OLED current corresponding to a 3V threshold voltage shift is decreased by 30% compared to the conventional 2TlC structure.
키워드