한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
- /
- Pages.129-130
- /
- 2008
ELA 결정화와 SPC 결정화를 이용한 쇼트키 장벽 다결정 실리콘 박막 트랜지스터
Schottky barrier Thin-Film-Transistors crystallized by Excimer laser annealing and solid phase crystallization method
- Shin, Jin-Wook (Kwangwoon Univ.) ;
- Choi, Chel-Jong (Chonbuk Univ.) ;
- Cho, Won-Ju (Kwangwoon Univ.)
- 발행 : 2008.06.19
초록
Polycrystalline silicon (poly-Si) Schottky barrier thin film transistors (SB-TFT) are fabricated by erbium silicided source/drain for n-type SB-TFT. High quality poly-Si film were obtained by crystallizing the amorphous Si film with excimer laser annealing (ELA) or solid phase crystallization (SPC) method. The fabricated poly-Si SB-TFTs have a large on/off current ratio with a low leakage current. Moreover, the electrical characteristics of poly-Si SB TFTs are significantly improved by the additional forming gas annealing in 2 %
키워드