Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Structural and optical properties of $TiO_2$ thin film fabricated by reactive sputtering

반응성 스퍼터링법에 의한 $TiO_2$ 박막의 구조적 및 광학적 특성

  • Yang, Hyeon-Hun (Department of Electrical Engineering, Mokpo National University) ;
  • Jeong, Woon-Jo (Department of Electrical Engineering, Mokpo National University) ;
  • Park, Gye-Choon (Department of Electrical Engineering, Mokpo National University)
  • Published : 2008.04.17
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Abstract

$TiO_2$ is a wide band-gap semiconductor (3.4 eV) and can only absorb about 5% of sun light in the ultraviolet light region, which largely limits its practical applications because of the lower utility of sun light and quantum yield. In order to move the absorption edge of $TiO_2$ fims to visible spectrum range, we have made the impurity level within a band-gap of $TiO_2$ thin film by introduction of oxygen vacancy. Oxygen-defected $TiO_2$ thin film have prepared by reactive sputtering with the partial pressure of $Ar:O_2=10:90{\sim}99.33:0.66$ ratio. As a result, we could have the impurity level of about 2.75 eV on condition that oxygen partial pressure is below 7%.

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